Abstract
In this work, n-Si/p-Sb2Se3 heterojunction is fabricated via thermal evaporation growth of Sb2Se3 onto (100) oriented n-type Si. The heterojunction was subjected to white light photo response measurements to evaluate the photodetection capabilities. Two different growth temperatures of 300 and 320 °C have been used for the growth of Sb2Se3. X-ray diffraction, Raman spectroscopy, high-resolution scanning electron microscopy and energy dispersive spectroscopy analyses indicated the formation of single-phase and near stoichiometric Sb2Se3 films for both of the growth temperatures. n-Si/p-Sb2Se3 heterostructure exhibited diode-like rectifying behavior under dark and illumination conditions. Furthermore, responsivity and detectivity values of the films grown at 300 and 320 °C were found to be 5.6 & 4.4 mA/W and 1.9 × 109& 1.17 × 109 Jones, respectively. Photocurrent generation was observed under 0 V bias condition, with rise and fall times of 0.68 s and 0.37 s for 300 °C and 0.28 s and 0.5 s for 320 °C grown n-Si/p-Sb2Se3 heterostructures, respectively, indicating the potential applicability in self-powered photodetectors.
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Data availability
The original data that support the findings of this study are available from the corresponding author upon reasonable request.
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Acknowledgements
The author would like to acknowledge SRM Central Instrumentation facility for providing XRD and SEM. Authors also acknowledge Department of Physics and Nanotechnology and SRM Nanotechnology Research Center for providing Raman and UV-Vis-NIR spectrophotometer measurements. Authors would also like to acknowledge Prof. S.Venkataprasad Bhat and Dr.S.Yuvaraj, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur for facilitating I–V, I–T & C–V measurements.
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AKJ: Conceptualization; Data curation; Formal analysis; Investigation; Methodology; Software; Visualization; Roles/Writing—original draft; Writing—review & editing. PM: Conceptualization, Methodology, Supervision, Validation; Resources, Writing—review & editing, Funding acquisition, Project administration.
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Jain, A.K., Malar, P. Fabrication and study of Si/Sb2Se3 heterojunction-based visible light photodetectors. J Mater Sci: Mater Electron 34, 2023 (2023). https://doi.org/10.1007/s10854-023-11445-z
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DOI: https://doi.org/10.1007/s10854-023-11445-z