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High spectral responsivity and specific detectivity of p-MoS2/n-Si heterojunction photodetector for near-IR detection via facile solution process

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Abstract

The simple and large-scale photodetector fabrication with superior performance is challenging. In this report, we studied the photodetector properties of simple and solution-processed MoS2 photodetector for NIR applications. The MoS2 nanosheets were synthesized via hydrothermal method and their structural, optical, chemical composition, and morphological properties have been explored in detail. The p-MoS2/n-Si (111) heterojunction was fabricated by spin coating method followed by vacuum annealing. The photodetector properties (photocurrent, responsivity, and detectivity) were studied over a broadband wavelength range from 300 to 1100 nm. The MoS2 photodetector shows excellent spectral response (600 mA/W), high specific detectivity (0.4922 × 1012 Jones), and short response/decay time (1/1 s) in NIR regime, respectively.

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Data are available from the authors upon reasonable request and with permission.

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Acknowledgements

The author acknowledges the Centre for Nanodevices fabrication, Shizuoka University, Hamamatsu, Japan for support of the instrument facilities. The authors thank the management of SRM Institute of Science and Technology for the support through SEED, STARTUP grant, and Nanotechnology Research Center (NRC) for the research facilities.

Funding

The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

Author information

Authors and Affiliations

  1. Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu, Shizuoka, 432-8011, Japan

    K. Silambarasan, S. Harish & K. Hara

  2. Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, 603 203, India

    K. Silambarasan, E. Vinoth, S. Harish & M. Navaneethan

  3. Nanotechnology Research Centre (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, 603 203, India

    M. Navaneethan

  4. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu, Shizuoka, 432-8011, Japan

    K. Hara

Authors
  1. K. Silambarasan
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  2. E. Vinoth
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  3. S. Harish
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  4. M. Navaneethan
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Contributions

KS contributed toward methodology, validation, formal analysis, and writing original draft. EV contributed toward methodology, validation, formal analysis, and writing original draft. SH contributed toward investigation, data curation, and writing original draft. MN contributed toward idea, investigation, visualization, and writing original draft. KH contributed toward supervision, visualization, and writing review & editing.

Corresponding authors

Correspondence to M. Navaneethan or K. Hara.

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Silambarasan, K., Vinoth, E., Harish, S. et al. High spectral responsivity and specific detectivity of p-MoS2/n-Si heterojunction photodetector for near-IR detection via facile solution process. J Mater Sci: Mater Electron 34, 1975 (2023). https://doi.org/10.1007/s10854-023-11375-w

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