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Study on the preparation and properties of (BixGa1-x)2O3 alloy semiconductor film deposited by radio frequency co-sputtering

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Abstract

Introducing other elements into gallium oxide materials to modify their properties is a hot topic today. This paper attempts to introduce Bi element to prepare (BixGa1-x)2O3 alloy semiconductor thin film by radio frequency co-sputtering, so as to achieve precise and effective tuning of its band gap. The sputtering power of Ga2O3 target remains constant at 80 W. The content of Bi element in the material is adjusted by varying the sputtering power of the Bi2O3 target. Samples with different Bi doping concentrations were obtained after annealing at 800 °C for 2 h. Fortunately, (BixGa1-x)2O3 semiconductor alloy films were successfully prepared by radio frequency co-sputtering, and the optical energy gap could be adjusted approximately linearly in the range of 5.14 to 5.27 eV by varying the Bi content. X-ray diffraction and scanning electron microscope results show that a phase transition occurs in the material when the sputtering power of Bi2O3 is 40 W. The results of Urbach energy and film transmittance indicate that moderate Bi doping can reduce the disorder of the material structure and improve the transmittance of the film. However, excessive Bi doping introduces more defects, increasing the scattering and absorption of the defects, ultimately leading to a reduction in film transmittance. These findings have propelled research in the field of gallium oxide doping and its band gap modulation.

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Funding

This work is supported by the National Natural Science Foundation of China (Grant No. 62204234), Beijing Nova Program (Grant No. Z211100002121079) and the Self-Funded Project of Scientific Research and Development Plan of Langfang Science and Technology Bureau (Grant No. 2022011063).

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Authors and Affiliations

  1. College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China

    Xue Meng, Jinxiang Deng, Ruidong Li, Qing Zhang, Juxin Lao, Jiahui Ren & Kun Tian

  2. Department of Basic Courses, Institute of Disaster Prevention, Hebei, 065201, China

    Ruidong Li

  3. Research and Development Center for Advanced Technologies in Microelectronics, Tomsk State University, Tomsk, 634050, Russia

    Aleksei V. Almaev

  4. CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China

    Xiaolei Yang

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  1. Xue Meng
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Contributions

XM (First Author): Conceptualization, Methodology, Investigation, Data curation, Formal analysis, Visualization, Writing-original draft, Writing-review and editing. JD (Corresponding Author): Conceptualization, Methodology, Funding acquisition, Resources, Supervision, Writing-review and editing, Project administration. RL: Conceptualization, Methodology, Writing-review and editing, Funding acquisition. AVA: Conceptualization, Writing-review and editing. XY: Conceptualization, Writing-review and editing, Funding acquisition. QZ: Conceptualization, Writing-review and editing. JL: Conceptualization, Writing-review and editing. JR: Conceptualization, Writing-review and editing. Kun Tian: Conceptualization, Writing-review and editing.

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Correspondence to Jinxiang Deng.

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Meng, X., Deng, J., Li, R. et al. Study on the preparation and properties of (BixGa1-x)2O3 alloy semiconductor film deposited by radio frequency co-sputtering. J Mater Sci: Mater Electron 34, 1780 (2023). https://doi.org/10.1007/s10854-023-11214-y

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