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Electrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayer

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Abstract

ZrO2 thin films were deposited on n-Si and quartz substrates by a reactive sputtering technique. The morphological and optical characterization of a sputtered ZrO2 thin film revealed a highly smooth surface with 1.5 nm roughness and optical band gap value of 5.7 eV. An Au/ZrO2/n-Si metal–insulator-semiconductor (MIS) structure was obtained by evaporation of the Au on ZrO2/n-Si structure. The electrical properties analyzed by current–voltage (I-V) measurements in the dark showed that the device had 5. 094 ideality factor, 0.808 eV barrier height, and 50 Ω series resistance values. The C-V measurements showed that the device could not follow the AC signals at higher frequencies owing to the interface states, and the barrier height value calculated using C-V data (0.916 eV) is higher than the one obtained from the I-V plot. The photoelectrical parameters were determined by I-V measurements at various light intensities. The findings proved that the photoelectrical parameters of the MIS device had a photosensing behavior.

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The data that support the findings of this study are available on request from the corresponding author.

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Funding

The authors acknowledge the financial support provided by the Jordan University of Science and Technology (JUST) through grant No. 635/2022.

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MGO and YSO performed the thin film deposition and formation of the device. YSO was responsible for supervising. MGO, YSO and BAA studied on analyze of the thin film. MGO, YSO, and MB characterize the device. All authors contributed to research strategy, the discussion, and the interpretation of the results and to the final form of the text and figures. All authors have read and agreed to the published version of the manuscript.

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Correspondence to Yusuf Selim Ocak.

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Obaid, M.G., Ocak, Y.S., Albiss, B.A. et al. Electrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayer. J Mater Sci: Mater Electron 34, 1768 (2023). https://doi.org/10.1007/s10854-023-11160-9

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