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Effect of cover annealing on Cu2SnS3 thin films deposited by dual-source fine-channel mist chemical vapor deposition

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Abstract

To improve the quality and obtain single-phase monoclinic Cu2SnS3 (CTS) thin films, precursors, which were deposited by a non-vacuum dual-source fine-channel mist chemical vapor deposition (CVD) process, were annealed by covering them with a soda lime glass (SLG) substrate or other precursors. After annealing with a cover, the annealed precursor showed X-ray diffraction (XRD) peaks attributable only to monoclinic CTS; however, the chemical composition of the annealed precursor covered by other types of precursors deviated from the stoichiometry. The SLG substrate was found to be suitable for the cover, and the annealing temperature dependence of cover annealing on the SLG substrate was investigated. When annealing the CTS thin film at 550 °C, only a single-phase monoclinic CTS was found in the XRD and Raman measurements. The bandgap of the CTS thin film was estimated to be approximately 0.91 eV from the \({\left(\alpha h\nu \right)}^{2}\) plots. Thus, the deposition results showed that a Cu-poor CTS thin film suitable for high-efficiency solar cells can be prepared using a non-vacuum process without the sulfurization treatment.

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Acknowledgements

This study was supported in part by the Nippon Sheet Glass Foundation for Materials Science and Engineering. This research was conducted using equipment shared by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) project for promoting the public utilization of advanced research infrastructure (Program for supporting the construction of core facilities; Grant No. JPMXS0440900022).

Funding

This study was supported in part by the Nippon Sheet Glass Foundation for Materials Science and Engineering. Author Kazuya Okamura, Ren Saito, Hirotaka Maeta, and Ayaka Kanai declare they have no financial interests. Author Kunihiko Tanaka have received grand from Nippon Sheet Glass Foundation for Materials Science and Engineering.

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Authors and Affiliations

  1. Department of Electrical, Electronics and Information Engineering, Nagaoka University of Technology, 1603-1, Kamitomioka, Nagaoka, Niigata, 940-2188, Japan

    Kunihiko Tanaka, Kazuya Okamura, Ren Saito, Hirotaka Maeta & Ayaka Kanai

Authors
  1. Kunihiko Tanaka
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  2. Kazuya Okamura
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  3. Ren Saito
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  4. Hirotaka Maeta
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  5. Ayaka Kanai
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by KT, KO, RS, HM and AK. The first draft of the manuscript was written by KT and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Kunihiko Tanaka.

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The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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The data supporting this study are available from the corresponding author upon reasonable request.

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Tanaka, K., Okamura, K., Saito, R. et al. Effect of cover annealing on Cu2SnS3 thin films deposited by dual-source fine-channel mist chemical vapor deposition. J Mater Sci: Mater Electron 34, 1742 (2023). https://doi.org/10.1007/s10854-023-11155-6

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