Abstract
Memristors with analog resistive switching could memorize and deal with information at the same time, similar to how biological synapses function by regulating the connection between two adjacent neurons. In this work, the memristor with ITO/amylum/Pt structure was prepared using amylum film as active layer. An electronic synaptic device is described. The current–voltage characteristics of the device under voltage pulse signal show typical behavior of artificial synaptic device. ITO/amylum/Pt devices have stable and reliable electrical characteristics at scanning bias. ITO/amylum/Pt memristor could well mimic the function and synaptic plasticity of biological synapses, such as amplitude-dependent plasticity, excitatory postsynaptic current, paired pulse facilitation, and learning, forgetting, and relearning processes.
Similar content being viewed by others
References
Y. Park, J.-S. Lee, Artificial synapses with short- and long-term memory for spiking neural networks based on renewable materials. ACS Nano 11, 8962–8969 (2017)
Y. Sun, N. He, Y. Wang, Q. Yuan, D. Wen, Multilevel memory and artificial synaptic plasticity in P(VDF-TrFE)-based ferroelectric field effect transistors. Nano Energy 98, 107252 (2022)
Y. Sun, Y. Wang, Q. Yuan, N. He, D. Wen, Vertical organic ferroelectric synaptic transistor for temporal information processing. Adv. Mater. Interfaces 9, 2201421 (2022)
K. Liao, P. Lei, M. Tu, S. Luo, T. Jiang, W. Jie, J. Hao, Memristor based on inorganic and organic two-dimensional materials: mechanisms, performance, and synaptic applications. ACS Appl. Mater. Interfaces 13, 32606 (2021)
Y. Sun, N. He, D. Wen, F. Sun, The nonvolatile resistive switching memristor with Co–Ni layered double hydroxide hybrid nanosheets and its application as an artificial synapse. Appl. Surf. Sci. 564, 150452 (2021)
L. Sun, G. Hwang, W. Choi, G. Han, Y. Zhang, J. Jiang, S. Zheng, K. Watanabe, T. Taniguchi, M. Zhao, R. Zhao, Y.-M. Kim, H. Yang, Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications. Nano Energy 69, 104472 (2020)
G. Zhou, Z. Wang, B. Sun, F. Zhou, L. Sun, H. Zhao, X. Hu, X. Peng, J. Yan, H. Wang, W. Wang, J. Li, B. Yan, D. Kuang, Y. Wang, L. Wang, S. Duan, Volatile and nonvolatile memristive devices for neuromorphic computing. Adv. Electron. Mater. 8, 2101127 (2022)
X. Yan, G. Cao, J. Wang, M. Man, J. Zhao, Z. Zhou, H. Wang, Y. Pei, K. Wang, C. Gao, J. Lou, D. Ren, C. Lu, J. Chen, Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse. J. Mater. Chem. C 8, 4926 (2020)
D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature 453, 80 (2008)
X. Yan, L. Zhang, H. Chen, X. Li, J. Wang, Q. Liu, C. Lu, J. Chen, H. Wu, P. Zhou, Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning. Adv. Funct. Mater. 28, 1803728 (2018)
L. Hu, W. Han, H. Wang, Resistive switching and synaptic learning performance of TiO2 thin film based device prepared by sol-gel and spin coating technique. Nanotechnology 31, 155202 (2020)
Y. Sun, L. Li, K. Shi, Analog and digital bipolar resistive switching in Co–Al-layered double hydroxide memristor. Nanomaterials 10, 2095 (2020)
B. Zeng, C. Liu, S. Dai, P. Zhou, K. Bao, S. Zheng, Q. Peng, J. Xiang, J. Gao, J. Zhao, M. Liao, Y. Zhou, Electric field gradient-controlled domain switching for size effect resistant multilevel operations in HfO2-based ferroelectric field-effect transistor. Adv. Funct. Mater. 31, 2011077 (2021)
B. Sun, G. Zhou, L. Sun, H. Zhao, Y. Chen, F. Yang, Y. Zhao, Q. Song, ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing. Nanoscale Horiz. 6, 939 (2021)
D. Wu, Q. Zhang, X. Wang, B. Zhang, Interface-confined synthesis of a nonplanar redox-active covalent organic framework film for synaptic memristors. Nanoscale 15, 2726 (2021)
B. Sueoka, M.M.H. Tanim, L. Williams, Z. Xiao, Y.Z. Seah, K.Y. Cheong, F. Zhao, A synaptic memristor based on natural organic honey with neural facilitation. Org. Electron. 109, 106622 (2022)
B. Sueoka, K.Y. Cheong, F. Zhao, Study of synaptic properties of honey thin film for neuromorphic systems. Mater. Lett. 308, 131169 (2022)
X.C. Xing, M. Chen, Y. Gong, Z.Y. Lv, S.T. Han, Y. Zhou, Building memory devices from biocomposite electronic materials. Adv. Mater. 21, 100 (2020)
M.-K. Kim, J.-S. Lee, Short-term plasticity and long-term potentiation in artificial biosynapses with diffusive dynamics. ACS Nano 12, 1680 (2018)
N. Raeis-Hosseini, Y. Park, J.-S. Lee, Flexible artificial synaptic devices based on collagen from fish protein with spike-timing-dependent plasticity. Adv. Funct. Mater. 28, 1800553 (2018)
B. Sueoka, K.Y. Cheong, F. Zhao, Natural biomaterial honey based resistive switching device for artificial synapse in renewable neuromorphic systems and bioelectronics. Appl. Phys. Lett. 120, 083301 (2022)
C. Shi, J. Wang, M.L. Sushko, Q. Wu, X. Yan, X.Y. Liu, Silk flexible electronics: from Bombyx mori silk Ag nanoclusters hybrid materials to mesoscopic memristors and synaptic emulators. Adv. Funct. Mater. 29, 1904777 (2019)
J. Yong, B. Hassan, Y. Liang, K. Ganesan, R. Rajasekharan, R. Evans, G. Egan, O. Kavehei, J. Li, G. Chana, B. Nasr, E. Skafidas, A silk fibroin bio-transient solution processable memristor. Sci. Rep. 7, 14731 (2017)
B.K. Murgunde, M.K. Rabinal, Solution processed bilayer junction of silk fibroin and semiconductor quantum dots as multilevel memristor devices. Org. Electron. 48, 276 (2017)
T. Hussain, H. Abbas, C. Youn, H. Lee, T. Boynazarov, B. Ku, Y. Jeon, H. Han, J.H. Lee, C. Choi, T. Choi, Cellulose nanocrystal based bio-memristor as a green artificial synaptic device for neuromorphic computing applications. Adv. Mater. Technol. 7, 2100744 (2022)
M.K. Rahmani, S.A. Khan, H. Kim, M.U. Khan, J. Kim, J. Bae, M.H. Kang, Demonstration of high-stable bipolar resistive switching and bio-inspired synaptic characteristics using PEDOT:PSS-based memristor devices. Org. Electron. 114, 106730 (2023)
D. Skowrońska, K. Wilpiszewska, Deep eutectic solvents for starch treatment. Polymers 14, 220 (2022)
N. Raeis-Hosseini, J.-S. Lee, Controlling the resistive switching behavior in starch-based flexible biomemristors. ACS Appl. Mater. Interfaces 8, 7326 (2016)
G. Lozano-Vazquez, J. Alvarez-Ramirez, C. Lobato-Calleros, E.J. Vernon-Carter, N. Hernández-Marín, Characterization of corn starch-calcium alginate xerogels by microscopy, thermal, XRD, and FTIR analyses. Starch-Starke 73, 1 (2021)
W. Liu, Y. Li, H.D. Goff, Distribution of octenylsuccinic groups in modified waxy maize starch: an analysis at granular level. Food Hydrocoll. 84, 210–218 (2018)
H. Peng, H. Xiong, S. Wang, Soluble starch–based biodegradable and microporous microspheres as potential adsorbent for stabilization and controlled release of coix seed oil. Eur. Food Res. Technol. 232, 693 (2011)
A.S.J. Arnóbio, V.S. Maria, C.P. Kelly, Thermal analysis of biodegradable microparticles containing ciprofloxacin hydrochloride obtained by spray drying technique. Thermochim. Acta 467, 91–98 (2007)
Y. Sun, D. Wen, Nonvolatile WORM and rewritable multifunctional resistive switching memory devices from poly(4-vinyl phenol) and 2-amino-5-methyl-1,3,4-thiadiazole composite. J. Alloy. Compd. 806, 215 (2019)
R. Waser, R. Dittmann, G. Staikov, K. Szot, Redox-based resistive switching memories—nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632 (2009)
N.R. Hosseini, J.-S. Lee, Controlling the resistive switching behavior in starch-based flexible biomemristors. ACS Appl. Mater. Interfaces 8, 7326 (2016)
N. He, Y. Sun, D. Wen, Synaptic behavior of Ni–Co layered double hydroxide-based memristor. Appl. Phys. Lett. 118, 173503 (2021)
Y. Wang, Q.F. Liao, D.H. She, Z.Y. Lv, Y. Gong, G.L. Ding, W.B. Ye, J.R. Chen, Z.Y. Xiong, G.P. Wang, Y. Zhou, S.T. Han, Modulation of binary neuroplasticity in a heterojunction-based ambipolar transistor. ACS Appl. Mater. Interfaces 12, 15370 (2020)
G. Liu, C. Wang, W.B. Zhang, L. Pan, C.C. Zhang, X. Yang, F. Fan, Y. Chen, R.W. Li, Organic biomimicking memristor for information storage and processing applications. Adv. Electron. Mater. 2, 1500298 (2016)
Z.Q. Wang, H.Y. Xu, X.H. Li, H. Yu, Y.C. Liu, X.J. Zhu, Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO Memristor. Adv. Funct. Mater. 22, 2759 (2012)
Funding
This work was supported by National Natural Science Foundation of China (Grand number: 62065001), Yunnan Young and Middle-aged Academic and Technical Leaders Reserve Talent Project, China (202205AC160001).
Author information
Authors and Affiliations
Contributions
EZ: Conceptualization, formal analysis, investigation, methodology, and supervision. JJ: Validation, visualization, and writing—original draft. GL: Writing—review and editing. CW: Investigation and conceptualization. CZ: Supervision. ZZ: Conceptualization and investigation.
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no known competing financial interests.
Data availability statement
The data that support the findings of this study are available from the corresponding author upon reasonable request.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Zhao, E., Jiang, J., Liu, G. et al. Organic polymer artificial synapse device based on amylum memristor. J Mater Sci: Mater Electron 34, 1688 (2023). https://doi.org/10.1007/s10854-023-11101-6
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s10854-023-11101-6