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Enhancing the thermoelectric performance of MgAgSb-based materials with heavy Zn-doped

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Abstract

The low intrinsic thermal conductivity, low cost, abundant element reserves, and superior mechanical qualities of MgAgSb-based near-room-temperature thermoelectric materials will eventually replace Bi2Te3-based materials. However, MgAgSb-based materials suffer from impurities that are caused by complicated phase transitions that reduce their thermoelectric properties. To create heavy Zn-doping MgAgSb-based materials, two-step differential ball milling and stoichiometric ratio regulation are used in this study. The second phases, pores, and some new phonon scattering centers are also provided by this technique, which leads to a low thermal conductivity of 0.8 W m−1 K−1. Meanwhile, significant Zn doping also optimizes the electrical properties. Finally, a doping level of 8% allows for a maximum zT value of 0.9 at 473 K. This strategy provides a straightforward solution without a lengthy annealing process. This technique encourages the use of MgAgSb-based products for commercial purposes.

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Funding

This research was supported by the National Natural Science Foundation of China [Grant Number 52177159], the Natural Science Foundation of Shaanxi Province [Grant Number 2021GXLH-Z-089], and the State Key Laboratory of Electrical Insulation and Power Equipment [Grant Number EIPE23305].

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TX, YZ study conceptualization and writing (original draft) the manuscript. YW, HH, CN, MR data curation, formal analysis and writing (review & editing), and funding acquisition and project administration.

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Correspondence to Hailong He.

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Xiong, T., He, H., Zhang, Y. et al. Enhancing the thermoelectric performance of MgAgSb-based materials with heavy Zn-doped. J Mater Sci: Mater Electron 34, 1632 (2023). https://doi.org/10.1007/s10854-023-11006-4

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