Abstract
We have investigated the surface passivation recovery by post-deposition annealing in a vacuum and at different pressure conditions of the a-Si:H/c-Si/a-Si:H. Gradual enhancement in the minority carrier lifetimes (MCL) and lowering of interface defect density (Dit) is noticed with an increase in the annealing pressure compared to vacuum annealing. After annealing in ambient at atmospheric pressure (760 Torr), the lifetime is drastically enhanced from 456 to 1057 µs with the lowest Dit of 8.1 × 109 eV−1 cm−2 compared to the as-deposited and vacuum-annealed cases of 1.77 × 1010 and 2.50 × 1010 eV−1 cm−2, respectively. The variation in MCL is assigned to the inter-diffusion of atomic hydrogen in the a-Si matrix and reorganization of the strained bonds leading to the structural improvement, which is verified from the spectroscopic ellipsometry (SE) and Fourier Transfer Infrared Spectroscopy (FTIR) analysis. The as-deposited films seem to be dominated by non-equilibrium local network structure at the interface due to the initial growth condition of the film. In contrast, annealed films seem to be equilibrated by reducing the built-in strain of bulk a-Si:H as well as saturating orbitals of silicon atoms.
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Acknowledgements
The authors would like to acknowledge the financial support from the Department of Science and Technology (DST), Government of India, under the Water and Clean Energy area of the Technology Mission Division (Grant no. DST/TMD/CERI/RES/2020/48G). One of the authors (S. M.) would like to thank DST for providing INSPIRE Faculty award, vide sanction order number DST/INSPIRE/04/2017/000821. The authors also want to acknowledge the IIT Delhi Nanoscale Research Facility for the Ellipsometry measurements.
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AP: Conceptualization, Methodology, Data Curation, Investigation, Formal analysis, Writing—Original Draft, and Visualization. SB: Data Curation, Investigation, Formal analysis, and writing. JP: Investigation, Simulation, and Writing—review and editing. SM: Methodology, Investigation, Visualization, Project administration, Writing—review and editing, and Funding acquisition. VKK: Validation, Resources, Writing—Review and Editing, Visualization, Supervision, and Funding acquisition.
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Pandey, A., Bhattacharya, S., Panigrahi, J. et al. Investigation of anisotropic textured crystalline silicon surface passivation with intrinsic amorphous silicon layers: role of annealing pressure conditions during passivation recovery. J Mater Sci: Mater Electron 34, 1576 (2023). https://doi.org/10.1007/s10854-023-10986-7
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DOI: https://doi.org/10.1007/s10854-023-10986-7