Abstract
The perovskites with ABX3 structure is commonly known as halide perovskites if X anion is a halide(X = Cl, Br, I). The lead free halide perovskite of CsTiBr3 is a stable and wide bandgap semiconductor. In the present work all-inorganic perovskite of pure and reduced graphene oxide (rGO) doped CsTiBr3 is synthesized by solvothermal method. The XRD analysis confirms the formation of CsTiBr3. The Raman spectrum shows that the doping agent GO exist as reduced graphene oxide (rGO) in the doped sample. Each grains of the sample are formed by spherical balls of closely packed nanorods. Structural modification could achieve through rGO doping. The scattered nanorods of CsTiBr3 which are not participating in spherical ball formation are wrapped up by the sheets of reduced graphene oxide (rGO) in the doped sample. The two dimensional sheet like structure and the semiconducting nature of rGO enhances the electrical properties of CsTiBr3. The conductivity of the CsTiBr3 has been improved and the activation energy dropped from 3.1 kJ/mol to 2.06 kJ/mol by 0.5% rGO doping.
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The authors acknowledge DST-SERB and KSCSTE for the financial support.
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The authors received financial support from DST-SERB (CRG/2018/003785) and KSCSTE (325/2022).
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The material preparation, data collection, analysis and interpretation of results and manuscript construction was done by KABB under the supervision of corresponding author RR. All the co-authors have contributed for the preparation of the manuscript.
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Beegum, K.A.B., Thomas, C., Sasi, S. et al. Bandgap reduction in rGO-doped CsTiBr3 perovskite nanorods by solvothermal method. J Mater Sci: Mater Electron 34, 1493 (2023). https://doi.org/10.1007/s10854-023-10869-x
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DOI: https://doi.org/10.1007/s10854-023-10869-x