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Resistive switching in ZnO/MoOx bilayer for non-volatile memory applications

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Abstract

Memory technologies are essential for transferring and preserving data. As the digital age progressed, memory device size, speed and efficiency were tuned to address the new demands. Resistive random access memory (RRAM) devices are promising candidates for future memory applications and have many advantages, such as scaling, speed, and endurance over conventional flash memory. In this work, bilayer metal oxide (MoOx/ZnO) devices are fabricated with Ag and ITO as top and bottom electrodes and their resistive switching characteristics are investigated for non-volatile memory applications. I–V characteristics of the device are analysed for the characteristic pinched hysteresis loop where bipolar switching has been observed with set voltage at 1.1 V and reset voltage at \(-\) 0.8 V. The field-dependent migration of oxygen vacancies in metal oxide layers accounts for the bipolar switching mechanism. The conduction mechanism for ITO/ZnO/MoOx/Ag device is studied, revealing ohmic conduction in the low voltage region while space charge limited conduction dominates in the high voltage region. Furthermore, the fabricated device shows excellent retention. Conclusively, this study suggests that the device switches at comparatively lower voltages and has remarkable data retention properties with the addition of MoOx layer over ZnO layer. Since the device shows excellent endurance and data retention properties, the fabricated device can be a good candidate for non-volatile memory applications such as RRAM and neuromorphic computing.

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Data are available from the corresponding author upon request.

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Acknowledgements

Authors acknowledge DST-FIST for FESEM and ellipsometry facility at the Department of Physics, Cochin University of Science and Technology, Kochi, Kerala, India. Authors would also like to thank DST SERB for the financial support.

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The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

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Authors and Affiliations

  1. Department of Physics, Cochin University of Science and Technology, Kochi, Kerala, 682 022, India

    Sandra Manoj & Aldrin Antony

  2. Centre of Excellence in Advanced Materials, Cochin University of Science and Technology, Kochi, Kerala, 682 022, India

    Antony Sharon, P. S. Subin & Aldrin Antony

  3. Inter University Centre for Nanomaterials and Devices, Cochin University of Science and Technology, Kochi, Kerala, 682 022, India

    Aldrin Antony

Authors
  1. Sandra Manoj
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  2. Antony Sharon
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Contributions

The authors SM, AS and PSS have contributed to preparing the manuscript. The materials preparation, device fabrication, data collection, interpretation and the first draft of the manuscript construction were written by SM, PSS, and AS contributed to the analysis and interpretation of data. AA contributed to the conceptualisation, supervision, data curation, writing a review and editing of the manuscript. All authors have read and approved the final manuscript for publication.

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Correspondence to Aldrin Antony.

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Manoj, S., Sharon, A., Subin, P.S. et al. Resistive switching in ZnO/MoOx bilayer for non-volatile memory applications. J Mater Sci: Mater Electron 34, 1472 (2023). https://doi.org/10.1007/s10854-023-10868-y

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