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Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness

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Abstract

In this research article, a recessed field-plated gate AlGaN/GaN-based nano-high electron mobility transistor (HEMT) grown on a β-Ga2O3 substrate is designed with and without insertion of AlN layer between AlGaN and GaN layers. The impact of intended AlN layer on the proposed HEMT’s carrier transport features, DC, and RF characteristics are discussed in this study. The outcome shows that introducing a thin AlN spacer layer induces the location of two-dimensional electron gas (2DEG) to shift away from AlGaN/GaN interface. Furthermore, the influence of different AlN thicknesses is studied. It has been observed that the 2DEG concentration rises as AlN layer thickness increases. In general, the mobility of 2DEG is reduced in typical HEMTs due to scatterings induced by alloy and interface roughness. The outcomes demonstrated that a 2 nm-thick AlN layer exhibited the least amount of interface scattering, which results into highest charge carrier mobility. The proposed nano-HEMT demonstrated an enhanced transport, DC and RF properties with the utilization of a lower lattice mismatched β-Ga2O3 material as a substrate, and the positioning of an AlN layer of thickness 2 nm between upper Al0.3Ga0.7N barrier and GaN buffer layers.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

The authors would like to acknowledge Department of Science and Technology (DST)-Science and Engineering Research Board (SERB), Govt. of India sponsored Mathematical Research Impact Centric Support (MATRICS) project no. MTR/2021/000370 for support.

Funding

This research was supported by Department of Science and Technology (DST)-Science and Engineering Research Board (SERB), Govt. of India sponsored Mathematical Research Impact Centric Support (MATRICS) project.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, 788010, India

    G. Purnachandra Rao & Trupti Ranjan Lenka

  2. Electronics and Communication Engineering Department, Kuwait College of Science and Technology, Doha, Kuwait

    Nour El I. Boukortt

  3. Center for Energy, Materials and Telecommunications (EMT), Institut National de la Recherche Scientifique (INRS), Université du Québec, Quebec, Canada

    Sharif Md. Sadaf

  4. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, 07102, USA

    Hieu Pham Trung Nguyen

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  1. G. Purnachandra Rao
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Contributions

All authors contributed to the study conception and design. GPR designed Research and Methodology, performed Simulation work, analyzed data, and wrote the paper. TRL contributed the Idea and Concept, Resources, and Funding acquisition and analyzed data. NEIB contributed to data analysis and revision. SMS contributed to data analysis and revision, and HPTN focused on Resources, Data analysis, and English improvement. All authors read and approved the final manuscript.

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Correspondence to Trupti Ranjan Lenka.

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Rao, G.P., Lenka, T.R., Boukortt, N.E.I. et al. Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness. J Mater Sci: Mater Electron 34, 1442 (2023). https://doi.org/10.1007/s10854-023-10867-z

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