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The effect of graphene layers on the optoelectronic properties of graphene–silicon photodetector

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Abstract

The graphene/silicon (g/Si) heterojunction has garnered significant attention due to the exceptional properties of graphene. As a result of graphene’s semi-metallic nature, the g/Si junction forms a Schottky diode. This study investigates the impact of the number of graphene layers on the optoelectronic properties of the Schottky diode by fabricating single, double, and triple-layer graphene–silicon Schottky diodes (GSSDs). The electro-optical properties of the samples were analyzed using light sources with varying wavelengths and intensities. The single-layer sample exhibited the highest responsivity in red light. Additionally, the response of the samples to all wavelengths decreased with increasing temperature. The samples response stability to light was favorable, with less than a 2% change observed after one month from the time of fabrication. Finally, the response speed of the samples to light was examined and reported. The single-layer sample exhibited a response speed of 277 microseconds (rise time) when the light was turned on and 307 microseconds (fall time) when the light was turned off.

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Data availability

The datasets generated during and/or analyzed during the current study are available from the first author upon reasonable request.

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Authors and Affiliations

  1. Department of Physics, College of Science, Wasit University, Al Kut, Wasit, Iraq

    Ali Jabbar Fraih & Muneer H. Jaduaa Alzubaidy

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  1. Ali Jabbar Fraih
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  2. Muneer H. Jaduaa Alzubaidy
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Contributions

AJF: experimental work, prepared the draft manuscript. MHJA: Conceptualization, Supervision, and manuscript editing.

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Correspondence to Ali Jabbar Fraih.

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Fraih, A.J., Alzubaidy, M.H.J. The effect of graphene layers on the optoelectronic properties of graphene–silicon photodetector. J Mater Sci: Mater Electron 34, 1481 (2023). https://doi.org/10.1007/s10854-023-10848-2

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  • DOI: https://doi.org/10.1007/s10854-023-10848-2

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