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Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

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Abstract

The electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes are identified by deep-level transient Fourier spectroscopy (DLTFS). The junction termination extension (JTE) and floating JTE rings (periphery protections) are realized using the Al+ ion-implantation process in the PiN diode structure, to mitigate the electric field crowding at the junction edges and obtain the theoretically projected off-state performance. The 4H-SiC PiN diode exhibits forward voltage drop of ~ 2.6 V at 1 mA, ideality factor of ~ 1.6, series resistance of ~ 1.2 Ω, low reverse leakage current < 0.5 nA at 200 V, blocking voltage > 200 V, built-in barrier potential of ~ 2.1 V, and effective doping concentration for the drift layer of ~ 7.9 × 1014 cm−3. The temperature-induced changes in the forward I–V characteristics are investigated from 25 to 150 °C. From the DLTFS results, three hole traps H1 at EV + 0.16 eV, H2 at EV + 0.3 eV, and H3 at EV + 0.63 eV, and two electron traps E1 at EC − 0.19 eV and E2 at EC − 0.67 eV are identified in the 4H-SiC PiN diodes. The current-mode DLTFS (I-DLTFS) and thermally stimulated capacitance (TSCAP) spectroscopy measurements are also carried out to acquire further information about the traps in the 4H-SiC PiN diodes.

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Data availability

The datasets analysed during this study are available from the corresponding author upon reasonable request.

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Acknowledgements

The results presented in this paper were attained during P. Vigneshwara Raja’s postdoc with Laboratoire Ampère, INSA Lyon, France; the author would like to thank the Ampere Lab team members for their help and support during his postdoc.

Funding

P. Vigneshwara Raja’s postdoctoral research work was financially supported by the IPCEI (Important Projects of Common European Interest) on Microelectronics/Nano 2022.

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Authors and Affiliations

  1. Department of Electrical Engineering, Indian Institute of Technology Dharwad, Dharwad, Karnataka, 580011, India

    P. Vigneshwara Raja

  2. Univ. Lyon, INSA Lyon, Univ. Claude Bernard Lyon 1, Ecole Centrale Lyon, CNRS, Ampère, 69621, Villeurbanne Cedex, France

    P. Vigneshwara Raja, Christophe Raynaud, Hervé Morel & Dominique Planson

  3. Supergrid Institute, 23 Rue Cyprian, 69611, Villeurbanne Cedex, France

    Besar Asllani

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  1. P. Vigneshwara Raja
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Contributions

The author contributions to this manuscript are given as follows: PVR: conceptualization, data curation, formal analysis, investigation, writing—original draft, writing—review and editing. CR: investigation, methodology, supervision, validation, visualization, project administration. BA: investigation, data curation, investigation, formal analysis, writing—review and editing. HM: investigation; supervision, validation, project administration, writing—review and editing. DP: investigation, methodology, supervision, funding acquisition, project administration, validation, visualization, writing—review & editing.

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Correspondence to P. Vigneshwara Raja.

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Raja, P.V., Raynaud, C., Asllani, B. et al. Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes. J Mater Sci: Mater Electron 34, 1383 (2023). https://doi.org/10.1007/s10854-023-10813-z

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