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RETRACTED ARTICLE: Effect of oxygen concentration in ZnO-based transparent flexible memristor synapse

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This article was retracted on 11 October 2023

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Abstract

Memristor which acts as an artificial synapse is truly inspired by biological neurons. This device does emulate various synaptic behavior as the brain of a human. In this work, Aluminum-Zinc Oxide (AZO)-based transparent flexible memristor is fabricated on a flexible Polyethylene Naphthalate (PEN) substrate. The composition of the device for the optimized flow rate of Ar:O2::2:1 is analyzed using X-ray photoelectron spectroscopy (XPS). A bipolar resistive switching behavior of AZO/ZnO/ITO exhibits in the device. It shows good endurance of more than 500 cycles and has a long retention up to 104 s. The improvement of non-linearity (potentiation 2.31 and depression 3.05) is obtained for the optimized device, having stable 25 cycles epochs. About 90% transparency in the visible region makes the device suitable for invisible electronics. These results show that the device can be used as a transparent electrode in neuromorphic applications.

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Data availability

The datasets generated and/or analyzed during this study are not publicly available due to confidentiality but are available from the corresponding author upon reasonable request.

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Author information

Authors and Affiliations

  1. Dept. of Electrical and Electronics Engineering, C. V. Raman Global University, Bhubaneswar, Odisha, 752054, India

    Asutosh Patnaik

  2. UST-IPPP, College of Electrical and Computer Engineering, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan

    Srikant Kumar Mohanty

  3. Department of Electronic Science, Berhampur University, Berhampur, 760007, Odisha, India

    Narayan Sahoo

  4. Department of Electronics and Communication Engineering, C. V. Raman Global University, Bhubaneswar, Odisha, 752054, India

    Debashis Panda

Authors
  1. Asutosh Patnaik
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  2. Srikant Kumar Mohanty
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  3. Narayan Sahoo
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  4. Debashis Panda
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Contributions

DP conceived the idea, fabricated the device and performed all measurements. The manuscript was written by AP, under the guidance of DP. SKM and NS helped with data interpretation and formatting. The final draft is verified by DP. All authors read the manuscript, finalized and approved.

Corresponding author

Correspondence to Debashis Panda.

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Patnaik, A., Mohanty, S.K., Sahoo, N. et al. RETRACTED ARTICLE: Effect of oxygen concentration in ZnO-based transparent flexible memristor synapse. J Mater Sci: Mater Electron 34, 1406 (2023). https://doi.org/10.1007/s10854-023-10797-w

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  • DOI: https://doi.org/10.1007/s10854-023-10797-w

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