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Optical characterization of (TlInS2)0.5(TlInSe2)0.5 crystal by ellipsometry: linear and optical constants for optoelectronic devices

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Abstract

TlInSSe [(TlInS2)0.5(TlInSe2)0.5] crystals have garnered significant attention as promising candidates for optoelectronic applications due to their exceptional optoelectrical characteristics. This study focused on investigating the linear and nonlinear optical properties of TlInSSe layered single crystals through ellipsometry measurements. The X-ray diffraction analysis revealed the presence of four distinct peaks corresponding to a monoclinic crystalline structure. In-depth analysis was conducted to examine the variations of refractive index, extinction coefficient, and complex dielectric function within the energy range of 1.25–6.15 eV. By employing derivative analysis of the absorption coefficient and utilizing the Tauc relation, the indirect and direct bandgap energies of TlInSSe crystals were determined to be 2.09 and 2.26 eV, respectively. Furthermore, this research paper presents findings on oscillator energy, dispersion energy, Urbach energy, zero and high frequency dielectric constants, plasma frequency, carrier density to effective mass ratio, nonlinear refractive index, and first-order and third-order nonlinear susceptibilities of TlInSSe crystals.

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The data that support the findings of this study are available from the corresponding authors upon reasonable request.

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Acknowledgements

We thank GUNAM Laboratory at the Middle East Technical University for the use of their equipment which are X-ray diffraction and ellipsometry measurements.

Funding

The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

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Authors and Affiliations

  1. Physics, Inter-Curricular Courses Department, Çankaya University, 06530, Ankara, Turkey

    I. Guler

  2. Department of Electrical and Electronics Engineering, Atilim University, 06836, Ankara, Turkey

    M. Isik

  3. Department of Physics, Middle East Technical University, 06800, Ankara, Turkey

    N. Gasanly

  4. Virtual International Scientific Research Centre, Baku State University, 1148, Baku, Azerbaijan

    N. Gasanly

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  1. I. Guler
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by IG, MI and NG. The first draft of the manuscript was written by IG and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to I. Guler.

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Guler, I., Isik, M. & Gasanly, N. Optical characterization of (TlInS2)0.5(TlInSe2)0.5 crystal by ellipsometry: linear and optical constants for optoelectronic devices. J Mater Sci: Mater Electron 34, 1346 (2023). https://doi.org/10.1007/s10854-023-10755-6

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