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Effect of solution-processed Mg-doped ZnO electron transport layer on the photodetector properties of MAPbI3 thin film

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Abstract

Solution-processed Mg-doped ZnO nanoparticles were synthesized by the precipitation method. Material formation and their crystal structure were confirmed by XRD and FTIR analysis of the materials. The optical properties of Mg-doped ZnO thin films were explored by the absorption and transmission spectra of the thin films. The band gap of the thin film increases with the increase of Mg concentration in ZnO. The electrical conductivity and the mobility of the Mg-doped thin films show a decreasing trend with the increase of Mg concentration in ZnO. The Mg-doped ZnO thin films were used as an electron transport layer in MAPbI3 perovskite photodetectors. The photodetectors show substantial responsivity in the wavelength range of 300 to 800 nm. The highest responsivity was observed in the UV and blue regions of light. The MAPbI3 photodetectors with the electron transport layer of Mg-doped ZnO thin films show responsivity more than 15 times in comparison to only ZnO thin film. Our studies demonstrate that the Mg-doped ZnO thin films form good energy levels alignments and interfaces for perovskite photoactive materials.

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Data availability

The data that support the findings of this study are available from the corresponding author, [C.K.Suman], upon reasonable request.

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Acknowledgements

The author gratefully acknowledges the funding agency Council of Scientific & Industrial Research (CSIR) for fellowship support and the Director of CSIR-National Physical Laboratory, New Delhi for providing the research facilities.

Funding

There is no funding received from any agencies. The Authors are grateful to the Director CSIR-National Physical Laboratory for in-house project support.

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Authors and Affiliations

  1. CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi, 110012, India

    Ankur Rana, Suraj P. Khanna, R. Srivastava & C. K. Suman

  2. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India

    Ankur Rana, Suraj P. Khanna, R. Srivastava & C. K. Suman

  3. Department of Physics, IIT Dhanbad, Dhanbad, 826004, India

    Abhishek Sharma

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  1. Ankur Rana
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Contributions

AR: performed the materials synthesis, device fabrication, and data collection. AS: performed the photodetector’s characterization. SPK: analysed the photodetector’s data. RS and CKS: were involved in the planning of experiments, experimental support, data analysis, and paper writing.

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Correspondence to R. Srivastava or C. K. Suman.

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Rana, A., Sharma, A., Khanna, S.P. et al. Effect of solution-processed Mg-doped ZnO electron transport layer on the photodetector properties of MAPbI3 thin film. J Mater Sci: Mater Electron 34, 1379 (2023). https://doi.org/10.1007/s10854-023-10751-w

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