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Comment on photoconduction measurements of semiconductors: the effect of temperature rises

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Abstract

Photoconductive methods have been widely employed for evaluating photo-electronic responses in semiconductors, while those are likely to be affected by bolometric effects induced by temperature rises, which have been neglected in many studies. We highlight that photo-thermal currents tend to become more dominant than photo-currents in semiconductors that have bandgap energies narrower than ~ 0.5 eV and carrier lifetimes shorter than ~ 1 ns, an example being the phase-change film Ge2Sb2Te5. We also discuss some ideas which could evaluate the photoconductivity in such materials.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

The authors would like to thank Professor S. Kasap for valuable suggestions and supports for preparing the manuscript.

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The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

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Authors and Affiliations

  1. Department of Applied Physics, Graduate School of Engineering, Hokkaido University, Sapporo, 060-8628, Japan

    Keiji Tanaka

  2. Department of Electrical, Electronic and Computer Engineering, Faculty of Engineering, Gifu University, Gifu, 501-1193, Japan

    Norimitsu Yoshida

Authors
  1. Keiji Tanaka
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  2. Norimitsu Yoshida
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KT had written the first draft of the manuscript, and NY commented on that, which was modified therein. The two authors read and approved the final manuscript.

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Correspondence to Keiji Tanaka.

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Tanaka, K., Yoshida, N. Comment on photoconduction measurements of semiconductors: the effect of temperature rises. J Mater Sci: Mater Electron 34, 1311 (2023). https://doi.org/10.1007/s10854-023-10716-z

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