Abstract
The effect of precursor ratio and sulfur-source to substrate distance on the growth of vertically aligned nanostructured (vertical) MoS2 thin films by single-step chemical vapor deposition technique is reported here. The growth parameters such as temperature, Mo:S ratio, growth time, and sulfur-source to substrate distance were varied systematically to obtain vertical MoS2 thin films. The density of vertical flakes was maximum at an optimum Mo:S ratio of 1:6 and sulfur-source to substrate distance of 4 cm. The formation of layered MoS2 thin films with densely packed vertical flakes of MoS2 nanostructures was further confirmed by Raman, PL, XRD, XPS, and TEM measurements. HER studies revealed an enhancement in electrocatalytic activity for the vertical MoS2 thin films compared with horizontally aligned nanostructured (horizontal) MoS2 thin films, making the former a potential candidate for HER catalyst.
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The data analysed during this study are available from the corresponding author on reasonable request.
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Acknowledgements
Author SBS acknowledges CSIR for research fellowship. The authors also thank DST-FIST for the FESEM facility installed at the Department of Physics, CUSAT, STIC CUSAT for TEM and NIIST Thiruvananthapuram for XPS analysis.
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SBS: Methodology, Investigation, Data curation, Writing—original draft. AA: Data curation. MKJ: Supervision RR: Writing—review and editing. AAS: Conceptualization, Supervision, Data curation, Writing—review and editing.
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Saseendran, S.B., Ashok, A., Jayaraj, M.K. et al. Single step growth of vertical MoS2 thin films by chemical vapor deposition for hydrogen evolution reaction. J Mater Sci: Mater Electron 34, 1233 (2023). https://doi.org/10.1007/s10854-023-10677-3
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DOI: https://doi.org/10.1007/s10854-023-10677-3