Abstract
In this study, we proposed a novel method of adding large amount of excessive Ti in Bi0.5Na0.5TiO3-based thin film to improve its energy storage density. Ti-excess 0.94Bi0.5Na0.5TixO3-0.06BaTixO3 (BNBTx, x = 1.00, 1.05, 1.10, 1.15) thin films were successfully prepared by sol–gel method. It was found that the phase structure of the thin films kept unchanged with the increase of Ti content, and substantial improvements in microstructure and breakdown strength could be obtained by the addition of an excess of Ti in BNBTx thin films, as well as reduced leakage. As a result, improved energy storage density of 34 J/cm3 and energy storage efficiency of 48% were achieved simultaneously in BNBT1.15 thin film at a medium electric field of 2400 kV/cm. Furthermore, Ti-excess thin films showed high-dielectric constant with good temperature stability from 25 to 200 °C. These results demonstrate that Ti-excess BNBTx thin film is a potential system for energy storage materials.
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Funding
This work was supported by Major Program of the Natural Science Foundation of China (Grant No. 51790490), Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory (Grant No. XHT2020-011), Natural Science Foundation of China (Grant No. 51872213) and Self-determined and Innovative Research Funds of SKLWUT (2021-PY-4).
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All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by YX, HH. The first draft of the manuscript was written by YX and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
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Xie, Y., Hao, H., Cao, M. et al. The effects of Ti-excess non-stoichiometry on the energy storage performances of BNT-based thin films. J Mater Sci: Mater Electron 34, 1310 (2023). https://doi.org/10.1007/s10854-023-10635-z
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DOI: https://doi.org/10.1007/s10854-023-10635-z