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Investigation of thermoelectric properties and photoresponse of Sb2S3−xSex crystals grown by Bridgman technique

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Abstract

The growth of Sb2S3−xSex (x = 0, 0.1, 0.2, 0.3) crystals is carried out by the Bridgman technique with the help of a joule heating vertical zone furnace. This paper mainly addresses the thermoelectric properties and photoresponse of grown crystals. The crystals are found to be pure and stoichiometric, as observed from the EDAX spectra. The X-ray diffractogram confirmed orthorhombic structure with space group Pnma and the ‘2θ’ shift in XRD peaks confirmed the substitution of S by Se atoms. Low-temperature Raman spectroscopy from 80 to 300 K shows a shift in the Raman peak and the value of the isobaric Gruneisen parameter γiP is found to be nearly 3.88 for all samples. Raman mapping spectroscopy confirmed the homogeneity of the crystals by depth profiling up to 10 microns. All the samples show a negative temperature coefficient of resistance confirming the semiconducting nature of the grown crystals. A slight increase in thermal conductivity is observed due to increased carrier concentration by Se atoms. The temperature dependence of thermoelectric parameters is measured from ambient to 600 K. The positive value of Seebeck coefficient S confirmed the p-type conductivity for all the crystals and the thermoelectric figure of merit ZT is increased for Sb2S2.7Se0.3 crystal compared to pure Sb2S3. The I–V characteristic and photoresponse of the grown crystals are investigated and the responsivity and detectivity are both found to increase with Se incorporation. As per our knowledge ZT for this series of crystals is not reported anywhere in the literature.

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Acknowledgements

The authors would like to express their gratitude to the Sophisticated Instrumentation Centre for Applied Research and Technology, (SICART), V. V. Nagar, Gujarat, India, for the characterization of samples by EDAX and XRD. The authors are thankful to the University Science and Instrumentation Centre (USIC), Sardar Patel University, V. V. Nagar, Gujarat, India, for the preparation and vacuum sealing of the quartz ampoule.

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Authors and Affiliations

  1. Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat, 388120, India

    Hiteshkumar R. Bhoi, M. P. Deshpande, Piyush Rajput, Yash V. Joshi, Zubin R. Parekh, Nidhishree M. Suchak & S. H. Chaki

  2. Department of Applied and Interdisciplinary Sciences (IICISST), Sardar Patel University, Vallabh Vidyanagar, Gujarat, 388120, India

    Sandip V. Bhatt & S. H. Chaki

  3. Department of Physical Sciences, P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology, Changa, Gujarat, 388421, India

    Shivam Patel

  4. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore, Madhya Pradesh, 452001, India

    V. G. Sathe

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Contributions

Writing original draft, Data curation, Formal analysis and Methodology: HRB, Supervision, Visualization and Writing review & editing: MPD, Conceptualization, Formal analysis and Methodology: SVB, Formal analysis and Resources: PR, Software and Investigation: SP, Formal analysis and Data curation: YVJ, Formal analysis and Data curation: ZRP, Formal analysis and Visualization: NMS, Data curation and Validation: V.GS, Formal analysis and Resources: SHC.

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Correspondence to Hiteshkumar R. Bhoi.

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Bhoi, H.R., Deshpande, M.P., Bhatt, S.V. et al. Investigation of thermoelectric properties and photoresponse of Sb2S3−xSex crystals grown by Bridgman technique. J Mater Sci: Mater Electron 34, 1217 (2023). https://doi.org/10.1007/s10854-023-10631-3

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