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Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors

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Abstract

Elevated temperature irradiation (ETI) is performed on the specially designed GLPNP transistors. Two temperatures rather than one are found to most efficiently promote the growth of traps on SiO\(_2\)/Si interface. The activation energies of the generation process near either optimum temperature (\(T_C\)) are approximately 0.88eV and 0.56eV, which imply at least two defect precursors are involved. Analysis suggest that the unusual two \(T_C\) should result from different mechanisms, which involved the competition between the conversion of charged traps to interface traps and the annealing of either hole traps or interface traps.

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Acknowledgements

This work was supported by NSFC under Grant Nos. 11804313 and the State Key Laboratory of Nuclear Physics and Technology-Peking University under grant No.NPT2020KFY16.

Funding

This work was supported by NSFC under Grant Nos. 11804313 and the State Key Laboratory of Nuclear Physics and Technology-Peking University under grant No.NPT2020KFY16.

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Authors and Affiliations

  1. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610200, Sichuan, People’s Republic of China

    Hang Zhou, Guanghui Zhang, Binghuang Duan & Yang Liu

  2. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, Sichuan, People’s Republic of China

    Hang Zhou, Guanghui Zhang, Binghuang Duan & Yang Liu

Authors
  1. Hang Zhou
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  2. Guanghui Zhang
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  3. Binghuang Duan
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  4. Yang Liu
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Contributions

All authors contributed to the study conception and design. Experiments, data collection, and analysis were performed by Hang Zhou. Parameter extraction was performed by Guanghui Zhang. The modeling and analytic analysis were performed by Yang Liu and Binghuang Duan. The first draft of the manuscript was written by Hang Zhou and revised by Yang Liu. All authors read and approved the final manuscript.

Corresponding author

Correspondence to Yang Liu.

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All authors have received research funding from China Academy of Engineering Physics institution.

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Zhou, H., Zhang, G., Duan, B. et al. Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors. J Mater Sci: Mater Electron 34, 1119 (2023). https://doi.org/10.1007/s10854-023-10534-3

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  • DOI: https://doi.org/10.1007/s10854-023-10534-3

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