Abstract
Strong green emission is observed in the new Tb3+ activated Ba2La4Zn2O10 nanocrystalline material series fabricated via solution combustion methodology. A tetragonal crystal framework with space group I4/mcm (140) having irregularly shaped grains with sizes between 37 and 56 nm is formed. Morphological aspects are examined via scanning and transmission electron microscopy. On near-ultra-violet excitation, the photoluminescence spectrum presents a fair green emission at 18,348 cm−1 wavenumbers consistent with the electronic transition 5D4 → 7F5. The energy transfer phenomena are also discussed. The highest luminous intensity is observed for 5.0 mol% of Tb3+ composition with 283 nm excitation wavelength. d–d exchanges authorized the presence of the concentration quenching phenomenon. Diffuse reflectance spectroscopy was taken into use to explore the energy band gap which lies in the semiconductor domain. The commission international de l’Eclairage coordinates lay in the greenish zone of the chromaticity plot, thus confirming their latent contention in phosphor-converted white light emitting diodes and advanced solid-state lighting applications.
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The data used in the current research work can be made available on reasonable request from the corresponding author (Dr. Rajesh Kumar Malik).
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Acknowledgements
The author, Hina Dalal, heartily acknowledges the University Grants Commission, India for receiving financial support in the form of SRF (Award no. 49/(CSIR-UGC NET JUNE 2019)) to carry out this research work properly.
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Funding was provided by University Grants Commission of India 49/(CSIR-UGC NET JUNE 2019).
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HD and MK: Data analysis, original draft writing, SK, PS and RD: Review Writing, MS, PD and NS: Conceptualization and Methodology, RKM: Results discussion and supervision.
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Dalal, H., Kumar, M., Kaushik, S. et al. Crystal structure investigation and photoluminescent aspects of green-emitting Tb3+ activated Ba2La4Zn2O10 nanocrystalline materials for solid-state illumination. J Mater Sci: Mater Electron 34, 1100 (2023). https://doi.org/10.1007/s10854-023-10505-8
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DOI: https://doi.org/10.1007/s10854-023-10505-8