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Effect of a urea/IPA-treated PEDOT:PSS hole injection layer in quantum-dot light emitting diodes

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Abstract

Quantum dot (QD) semiconductor nanocrystals are being considered a competitive contender as the emitting materials of next-generation light-emitting diodes (LEDS) in lighting and display applications. One of ways to improve the performance of a QDs-based device is to develop/modify the layers in the multi-layer structure of the device to have good stability and electrical properties. In this study, urea was selected as a treatment agent for PEDOT: PSS modification as a hole injection layer in QLED. The study found that the performance of a QLEDs with the urea-treated PEDOT:PSS film improved compared to that of a QLEDs with pristine PEDOT:PSS film, and that the performance could further be improved with modifications in the solvent system of PEDOT:PSS with the addition of isopropanol (IPA), resulting in better surface morphology. Consequently, a QLED made of the urea/IPA-treated PEDOT:PSS had a higher performances than those of conventional QLED. Thus, the use of a modified PEDOT:PSS layer in a QLED is very effective in enhancing the injection holes and overall performance of the QLED.

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Acknowledgements

This work was supported by the Basic Science Research Program through the National Research Foundation Korea (NRF-2018R1D1A1B07048441).

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Authors and Affiliations

  1. School of Electronics and Displays Engineering, Hoseo University, Asan, 31499, South Korea

    Do Lam Nguyen & Woon-Seop Choi

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  1. Do Lam Nguyen
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  2. Woon-Seop Choi
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DLN: investigation, data analysis, writing. WSC: conceptualization, review & editing, supervision.

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Correspondence to Woon-Seop Choi.

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Nguyen, D.L., Choi, WS. Effect of a urea/IPA-treated PEDOT:PSS hole injection layer in quantum-dot light emitting diodes. J Mater Sci: Mater Electron 34, 1064 (2023). https://doi.org/10.1007/s10854-023-10488-6

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  • DOI: https://doi.org/10.1007/s10854-023-10488-6

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