Abstract
The present study used the sol–gel spin coating technique to grow pure and Strontium (Sr) doped SnO2 thin films on a glass substrate, X-ray diffraction analysis showed that all the deposited films had a polycrystalline tetragonal crystal structure. The surface topography and surface roughness (Rrms) were estimated with the AFM analysis. The Fourier transform infrared spectroscopy (FTIR) study showed that all the films exhibit the Sn–O, Sn–O–Sn, Sn–OH, and O–H vibration peaks. The XPS spectra of Sr-doped SnO2 films revealed the presence of Sn, O, and Sr elements and their oxidation states. The Sr-doped SnO2 films have shown optical transmittance of above 76% in the visible region. The optical band gap energy (Eg) was found to be 3.89 eV in pure SnO2 film, whereas it is decreased with the Sr doping, the lowest band gap of 3.78 eV was obtained in 5 at% Sr: SnO2 film. Photoluminescence analysis (PL) revealed the presence of oxygen vacancies in Sr-doped SnO2 films with a strong green emission peak along with small intensities of UV and blue emission bands. Further, a minimum sheet resistance (Rsh) of 32 Ω/Sq and a high figure of merit (ϕ) of 3.8 × 10–3 Ω−1 were found in 3 at% Sr: SnO2 film.
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The datasets generated during and/or analyzed during the current study are available from the corresponding author upon reasonable request.
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The necessary characterization facilities were generously provided by the IISc Bangalore, India, which the authors appreciate. The authors are also thankful to Presidency University, Bangalore, India, for providing the synthesis resources to complete this work.
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Akkera, H.S., Mann, V., Varalakshmi, B.N. et al. Effect of Sr-doped on physical and photoluminescence properties of SnO2 transparent conducting oxide thin films. J Mater Sci: Mater Electron 34, 1044 (2023). https://doi.org/10.1007/s10854-023-10473-z
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DOI: https://doi.org/10.1007/s10854-023-10473-z