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Reactive magnetron sputtered AlN thin films: structural, linear and nonlinear optical characteristics

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Abstract

This study investigates the structural and optical characteristics of aluminum nitride (AlN) thin films deposited using reactive magnetron sputtering (dcMS)in an Ar + N2 (80:20%) atmosphere. The AlN thin films were deposited on a substrate without any heat treatment process, and their structural properties were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical properties of the AlN thin films were studied by analyzing their transmittance and reflection using a double-beam UV–Vis–NIR spectrophotometer within the 300–1000 nm range. The results show that the AlN thin films have a wurtzite structure with a preferred orientation, and the average particle size is in the range of 80–83 nm. The AlN thin films have an average transmittance of approximately 70% and are transparent in the visible spectrum. The direct bandgap increases from 3.70 to 3.98 eV with increasing work pressure, and the refractive index increases to 2.17. Moreover, nonlinear optical parameters, including the nonlinear refractive index n2 and the nonlinear absorption coefficient βc, were calculated for the AlN thin films. The unique characteristics described above suggest potential applications that could make use of these properties.

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Acknowledgments

The authors express their gratitude to Princess Nourah bint Abdulrahman University Researchers Supporting Project (Grant No. PNURSP2023R17), Princess Nourah bint Abdulrahman University, Riyadh, Saudi Arabia.

Funding

The authors express their gratitude to Princess Nourah bint Abdulrahman University Researchers Supporting Project (Grant No. PNURSP2023R17), Princess Nourah bint Abdulrahman University, Riyadh, Saudi Arabia.

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Authors and Affiliations

  1. Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, P.O.Box 84428, Riyadh, 11671, Saudi Arabia

    Haifa A. Alyousef

  2. Physics Department, Faculty of Science, Al-Azhar University, Assiut, 71542, Egypt

    A. M. Hassan & Hesham M. H. Zakaly

  3. Computer Engineering Department, Faculty of Engineering and Natural Sciences, Istinye University, 34396, Sarıyer, Istanbul, Turkey

    Hesham M. H. Zakaly

  4. Institute of Physics and Technology, Ural Federal University, 620002, Yekaterinburg, Russia

    Hesham M. H. Zakaly

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HAA, AMH, HMHZ: Conceptualization, Methodology, Software, Validation, Investigation, Data Curation, Writing-Review and Editing, Visualization, Supervision.

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Alyousef, H.A., Hassan, A.M. & Zakaly, H.M.H. Reactive magnetron sputtered AlN thin films: structural, linear and nonlinear optical characteristics. J Mater Sci: Mater Electron 34, 1088 (2023). https://doi.org/10.1007/s10854-023-10459-x

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