Abstract
A series of polyvinylidenfluoride (PVDF)-based composite films with different amounts of copper indium disulfide quantum dots (CuInS2 QDs) were prepared via solution casting and thermal treatment. With the addition of CuInS2 QDs, phase transition occurred from α phase to β and γ phase. The dielectric constant increased markedly from 11.4 of PVDF to 23.6 of 2% CuInS2 QDs/PVDF composite films at 20 Hz, and the Tanδ of composite films decreased at above 1 kHz at room temperature. As temperature increases, the Curie points (Tc) of all films appeared and shifted to higher temperature, and the shift was more significant with higher CuInS2 QDs content. The Tanδ of the composite films was visibly lower than that of pure PVDF above 150 °C. Furthermore, the σac of CuInS2 QDs/PVDF composite films slightly increased and remained lower than 106 S/m at 1 kHz, indicating that the CuInS2 QDs/PVDF composite films could be potential candidates for dielectric material.
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Acknowledgements
This work was funded by Science and Technology Project of Hebei Education Department (No. ZD2022150), Key Project of Handan University (No. XZ2019101), National Natural Science Foundation of China (No. 22171062), Natural Science Foundation of Hebei Province of China (No. B2021109002).
Funding
This work was funded by Science and Technology Project of Hebei Education Department (Grant No. ZD2022150), Key Project of Handan University (Grant No. XZ2019101), National Natural Science Foundation of China (Grant No. 22171062), Natural Science Foundation of Hebei Province of China (Grant No. B2021109002).
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XZ performed experimental design and writing-original draft preparation. CL participated in data curation. FY and DY performed Investigation. JH and DL provided data analysis suggestion. GP performed supervision. All authors read and approved the final manuscript.
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Zhao, X., Li, C., Yin, F. et al. Enhanced dielectric properties of poly(vinylidene fluoride) by introducing copper indium disulfide quantum dots. J Mater Sci: Mater Electron 34, 975 (2023). https://doi.org/10.1007/s10854-023-10415-9
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DOI: https://doi.org/10.1007/s10854-023-10415-9