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Facile synthesis of indium doped CdSe thin films: microstructural and optoelectronic characteristics

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Abstract

Indium-doped CdSe has shown great potential as an active absorber and a window material in optoelectronic devices. In this communication, surface engineering of CdSe thin films was achieved by indium doping using an indigenously developed chemical growth technique. The substantial replacement of Cd2+ by In3+ was observed through the compositional studies. Surface microscopic studies revealed tiny spherical crystallites in a diffused environment with large inter-granular spacings. Atomic force microscopy shows an increased surface roughness and crystallite size. The energy band gap (Eg) of CdSe (1.80 eV) was shifted towards the ideal value (1.54 eV) with the integration of In3+ in the CdSe host. The In3+ impurity increases absorption, and upgrades the refractive index and dielectric constants (static, real, and imaginary) of CdSe thin films, further, beneficial to improve the performance of optoelectronic devices. The electrical conductivity was modulated up to 8.10 × 10−5 (Ω cm)−1 for x = 0.1.

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Funding

This work was supported by “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea. (No. 20204010600100). The authors are grateful to the Researchers Supporting Project number (RSP2023R266), King Saud University, Riyadh, Saudi Arabia for the financial support.

Author information

Authors and Affiliations

  1. School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk, 38541, Republic of Korea

    G. T. Chavan & Chan-Wook Jeon

  2. School of Physical Sciences, Punyashlok Ahilyadevi Holkar Solapur University, Solapur, Maharashtra, 413255, India

    S. T. Pawar

  3. Jagdamb Mahavidyalaya, Achalpur, Amravati, Maharashtra, 444806, India

    B. Y. Fugare

  4. All India Council for Technical Education (AICTE), New Delhi, 110070, India

    S. S. Kamble

  5. Department of Physics, T.C. College Baramati, Pune, Maharashtra, 413102, India

    P. C. Pingale

  6. Department of Chemical and Petroleum Engineering, United Arab Emirates University, 15551, Al Ain, United Arab Emirates

    Yedluri Anil Kumar

  7. Department of Nanometrology, Faculty of Electronics, Photonics and Microsystems, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

    A. Sikora

  8. Department of Chemistry, College of Science, King Saud University, P. O. Box 2455, Riyadh, 11451, Saudi Arabia

    Abdullah A. Al-Kahtani

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  1. G. T. Chavan
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  7. A. Sikora
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  9. Chan-Wook Jeon
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Contributions

G.T. Chavan: Writing–Conceptualization, Original Draft. S.T. Pawar–Data Curation, B.Y. Fugare–Software. S.S. Kamble—Writing-Review and Editing. P.C. Pingale–Formal analysis. Yedluri Anil Kumar–Writing-Review, Resources, Investigation, Validation. A. Sikora–Visualization, Validation. Abduallah A AlKahtani—Writing-Review, Funding acquisition, Supervision. Chan-Wook Jeon–Project administration, Funding acquisition.

Corresponding authors

Correspondence to G. T. Chavan or Chan-Wook Jeon.

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Chavan, G.T., Pawar, S.T., Fugare, B.Y. et al. Facile synthesis of indium doped CdSe thin films: microstructural and optoelectronic characteristics. J Mater Sci: Mater Electron 34, 888 (2023). https://doi.org/10.1007/s10854-023-10278-0

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