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Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy

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Abstract

The optical non-destructive characterization of tin-doped GaNxAs1−x layer grown on GaAs (100) is presented. Molecular beam epitaxy was employed to grow GaNAs:Sn samples with nitrogen molar content at two different values, x ~ 0.001 and ~ 0.02. The n-type doping concentration was controlled by the Sn effusion cell temperature (TSn), exploring the range from 700 to 850 °C. High-resolution x-ray diffraction rocking curves of the samples indicate that it is possible to obtain GaNAs:Sn layers with appropriated crystallinity. Raman spectra present modifications in vibrational modes related to the Sn atom incorporation. The plasmon-phonon-coupled mode frequency and intensity are evaluated, showing a TSn-dependent donor atom concentration range from 1016 to 1019 cm−3. Spectral signatures obtained by photoreflectance spectroscopy reveal an increasing E− broadening parameter as the Sn effusion cell temperature is raised. Additionally, from Franz–Keldysh oscillations it is observed that the internal electric field strength increases with the donor concentration. The optical results were contrasted using the four-point probe method, demonstrating changes in sheet resistivity for the samples according with the employed spectroscopies. For similar TSn, the set of samples with x ~ 0.02 shows increased properties related to tin incorporation for each characterization technique.

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Data availability

The datasets generated during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

The authors acknowledge to CONACYT program Investigadoras e Investigadores por Mexico (Project No. 44). The authors also thank IrinaVlaeva for professional English editing service.

Funding

The authors acknowledge the financial support of FRC-UASLP, COPOCyT, and CONACYT-Mexico through grants: INFR-2015-01-255489, CB 2015- 257358, PNCPN2014-01-248071, and Fideicomiso 23871.

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Authors and Affiliations

  1. Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología (CIACYT), Universidad Autónoma de San Luis Potosí, Av. Sierra Leona #550, Col. Lomas 2a Sección, 78210, San Luís Potosí, San Luis Potosí, México

    M. Villarreal-Faz, P. G. Meza-Reyes, A. Belio-Manzano, L. M. Hernández-Gaytán, C. A. Mercado-Ornelas, F. E. Perea-Parrales, J. P. Olvera-Enríquez, L. I. Espinosa-Vega, A. G. Rodríguez & V. H. Méndez-García

  2. Facultad de Ciencias Físico-Matemáticas, Universidad Autónoma de Sinaloa, Av. de las Américas y Blvd. Universitarios, 80000, Culiacán, Sinaloa, México

    C. M. Yee-Rendón

  3. CONACYT-Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología (CIACYT), Universidad Autónoma de San Luis Potosí, Av. Sierra Leona #550, Col. Lomas 2a Sección, 78210, San Luís Potosí, San Luis Potosí, México

    I. E. Cortes-Mestizo

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  1. M. Villarreal-Faz
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  2. P. G. Meza-Reyes
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Contributions

Thin-film preparation, characterization, and writing of the manuscript were realized by all the authors. Data collection and analysis were performed by MVF and PGMR. IECM contributed to the conceptualization, supervision, and editing of the manuscript. All authors read and approved the final manuscript.

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Correspondence to I. E. Cortes-Mestizo.

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Villarreal-Faz, M., Meza-Reyes, P.G., Belio-Manzano, A. et al. Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy. J Mater Sci: Mater Electron 34, 812 (2023). https://doi.org/10.1007/s10854-023-10195-2

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