Abstract
K/Ce co-doped Bi4Ti3O12–Ba1−x(K1/2Ce1/2)xBi4Ti4O15 (BBIT-xKC, 0 ≤ x ≤ 0.3) intergrowth bismuth layered piezoelectric ceramics were prepared by traditional solid-state reaction. The effects of K/Ce substitution on structure, high temperature conductivity, and piezoelectric properties of BBIT were systematically investigated. The XRD results suggest that all the samples exhibited 3–4 layers of intergrowth bismuth layered orthogonal structure, the Raman mode variation revealed the K/Ce ions enter A-site. The Curie temperature (Tc) of BBIT ceramics has been raised. The decrease of dielectric loss and increase of impedance activation energy is related to the decrease of oxygen vacancy (OV) concentration, which is demonstrated by XPS measurements. The BBIT-0.15KC ceramic sample has outstanding electrical properties, the remanent polarization 2Pr is 30.1 µC/cm2, Tc is 535 °C, and the d33 value is 22.3 pC/N. The d33 value remains at its original 91.9% after depolarization at 400 °C, showing good thermal stability.
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Acknowledgements
This work is financially supported by the National Natural Science Foundation of China (Grant Nos. 51862016, 52062018), and the Natural Science Foundation of Jiangxi Province (20212ACB214007, 20212BAB201019).
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CC: conceptualization, methodology, writing—original draft. XJ: project administration. CC: resources, data curation. XH: visualization, writing—review, and editing. XN: data curation. FY: conceptualization, validation. CZ: experiment.
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Chen, C., Jiang, X., Chen, C. et al. Improved Curie temperature and piezoelectric activity of K/Ce co-doped Bi4Ti3O12–BaBi4Ti4O15 intergrowth structure ceramics. J Mater Sci: Mater Electron 34, 763 (2023). https://doi.org/10.1007/s10854-023-10136-z
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DOI: https://doi.org/10.1007/s10854-023-10136-z