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Modulating carrier injection through rational control of hole transport layer for perovskite light-emitting diodes

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Abstract

Charge balance in the emissive layer through well-matched energy levels and reduced barrier of the transport layers can help to attain maximum radiative recombination. In this work, four hole transporting layers (HTLs) have been used to regulate the hole injection in the emissive layer. The HTLs have varying HOMO levels aligning with the work function of FTO and HOMO of the emissive layer. Among the four HTLs, NPD-based perovskite LED device demonstrated the best performance with the highest brightness of 24,343 cd m−2, current efficiency of 16.2 cd A−1, and turn-on voltage of 4.7 V. The main reason for such improved results was the well-matched HOMO of NPD with both the anode and emissive layer supporting enhanced hole injection. Both the photoluminescence and electroluminescence studies confirm pure green emission with CIE coordinates (0.22, 0.75). The best quality film morphology for NPD-based perovskite film supported efficient transport of the charges. The crystallinity of the NPD-based perovskite film was also found to be optimum. Finally, stability of the working PLEDs is tested and superior stability with 79% of the retention of initial brightness is observed for NPD-based device.

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Data availability

Data are available [from the authors] with the permission of the publisher. The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

The authors acknowledge financial Grants from DST, India, through the projects DST/CRG/2019/002164, Deity, India, no. 5(1)/2022-NANO, Max-Planck-Gesellschaft IGSTC/MPG/PG(PKI)/2011A/48 and MHRD, India, through SPARC project SPARC/2018–2019/P1097/SL. The Centre for Nanotechnology and Central Instrument Facility, IIT Guwahati, are acknowledged for instrument facilities.

Funding

This work was supported by DST, India, through the projects DST/CRG/2019/002164, Deity, India, no. 5(1)/2022-NANO, Max-Planck-Gesellschaft IGSTC/MPG/PG(PKI)/2011A/48 and MHRD, India, through SPARC project SPARC/2018–2019/P1097/SL.

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Authors and Affiliations

  1. Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam, 781039, India

    Ramesh Babu Yathirajula, Ritesh Kant Gupta, Anwesha Choudhury & Parameswar Krishnan Iyer

  2. Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati, Assam, 781039, India

    Mohammad Adil Afroz & Parameswar Krishnan Iyer

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  1. Ramesh Babu Yathirajula
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  2. Ritesh Kant Gupta
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  3. Mohammad Adil Afroz
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  4. Anwesha Choudhury
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  5. Parameswar Krishnan Iyer
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Contributions

The manuscript was written through contributions of all authors. Material preparation, data collection, and analysis were performed by RBY, RKG, MAA, AC, and PKI. The first draft of the manuscript was written by RBY and RKG, and all authors commented on previous versions of the manuscript. All authors have given approval to the final version of the manuscript.

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Correspondence to Parameswar Krishnan Iyer.

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Yathirajula, R.B., Gupta, R.K., Afroz, M.A. et al. Modulating carrier injection through rational control of hole transport layer for perovskite light-emitting diodes. J Mater Sci: Mater Electron 34, 729 (2023). https://doi.org/10.1007/s10854-023-10066-w

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