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Analysis of opto-electrical properties of Cu/Sr–W/n-Si (MIS) Schottky barrier diode for optoelectronic applications

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Abstract

In this study, the Schottky diodes based on an interfacial layer of Sr–W thin film were fabricated. Thin films were coated on glass and silicon substrates by low-cost jet nebulizer spray pyrolysis (JNSP) coating technique with optimized substrate temperatures 500 °C. Structural, surface morphology, optical, and electrical characteristics of Sr–W thin film were investigated. In particular, the I–V characteristics of Cu/Sr–W/n-Si diodes in dark and light excitations were analysed. The maximum barrier height (Φb) for the diode fabricated 6 wt% tungsten under xenon lamp light irradiation was observed at 0.83 eV. Also, near ideal ideality factor (n) of the diode parameters, it was found at highest 6 wt% tungsten. The results show that diodes are more appropriate for the improvement of good quality photodiodes as well as photodetector applications.

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Acknowledgements

The authors extend their appreciation to the Research Center for Advanced Materials Science (RCAMS), King Khalid University, Saudi Arabia, for funding this work under grant number RCAMS/KKU/020-22.

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Authors and Affiliations

  1. Department of Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, Chennai, 602 105, Tamil Nadu, India

    V. Balasubramani & S. Thanikaikarasan

  2. Department of Physics, Govt Arts And Science College, Sivakasi, 626124, , Tamil Nadu , India

    R. Marnadu

  3. Department of Physics, Adhiyamaan College of Engineering, Hosur, Tamilnadu, 635109, India

    R. Priya

  4. Key Laboratory of High-temperature and High-pressure Study of the Earth’s Interior, Institute of Geochemistry, Chinese Academy of Sciences, , Guiyang, Guiyang, 550081, China

    A. Sivakumar

  5. Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia

    Mohd. Shkir & F. Maiz

  6. Division of Research and Development, Lovely Professional University, Phagwara, Punjab, 144411, India

    Mohd. Shkir

  7. Laboratory of Thermal Processes, Center for Energy Research and Technology, BP: 95, Borj-Cedria, Tunisia

    F. Maiz

  8. School of Chemical Engineering, Yeungnam University, Gyeongsan, 38541, Republic of Korea

    Woo Kyoung Kim & Vasudeva Reddy Minnam Reddy

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  1. V. Balasubramani
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Contributions

All the authors contributed to the study conception and design. Materials preparation, data collection, and analysis were performed by VB, RM, ST, RP, AS, MS and FM, WKK, and VRMR. All authors read and approved the final manuscript. VB: writing—original draft, methodology, conceptualization, visualization, methodology, supervision, writing—review and editing. RM: conceptualization, visualization, writing—review and editing. ST: writing—review and editing. RP: writing—review and editing. AS: writing—review and editing. MS and FM: writing—review and editing, funding acquisition. WKK; writing—review and editing VRMR; writing—review and editing and Supervision.

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Correspondence to V. Balasubramani or Vasudeva Reddy Minnam Reddy.

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Balasubramani, V., Marnadu, R., Priya, R. et al. Analysis of opto-electrical properties of Cu/Sr–W/n-Si (MIS) Schottky barrier diode for optoelectronic applications. J Mater Sci: Mater Electron 34, 560 (2023). https://doi.org/10.1007/s10854-022-09733-1

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