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Influence of Sn doping on the structure, optical, and electrical properties of p-type cuprous iodide thin films

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Abstract

The effects of the tin (Sn) doping on the characteristics of p-type cuprous iodide (CuI) thin films prepared using successive ionic layer adsorption and reaction (SILAR) have been examined in detail. The doping concentration of the Sn subjected to change from 0 to weight 8%. X-ray diffraction (XRD) consequences established the γ-phase cubic structure along the preferred development orientation analogous to (111) XRD plane. The Williamson and Hall (W-H) analysis has been used to calculated influence of crystallite size and micro-strain on the peak expansion of doping with different doping levels. The field-emission scanning electron microscope (FESEM) revealed the surface morphological and the grain size variation declined by means of doping concentration and agglomerated at large doping percentage. The estimated energy bandgap for the of pure and doped thin films changes as of 2.42 to 2.65 eV with Sn doping concentration. The photoluminescence (PL) results the of pure and doped CuI thin films presented a strong, room-temperature PL at the energy about their optical bandgaps and the peak intensity reduced with growing the doping level. The Sn doping improves the electrical conductivity with charge mobility and in addition to carrier concentration in CuI thin films as inveterate by Hall analysis. It can be proposed that the obtained results of CuI thin films with Sn doping are appropriate for hole transport layer of perovskite solar cells.

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The authors confirm that the data used to support the findings of this study are available within the manuscript and the Raw data that support the findings of this study are available from the corresponding author upon request.

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Acknowledgements

The authors would like to thank the Deanship of Scientific Research at Shaqra University Saudi Arabia for supporting this work.

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Authors and Affiliations

  1. Department of Physics and Astronomy, College of Science, King Saud University, P.O. BOX 2455, Riyadh, 11451, Saudi Arabia

    Syed Mansoor Ali, M. S. AlGarawi, S. S. AlGhamdi & H. Kassim

  2. Department of Physics, Faculty of Science, Islamic University of Madinah, Kingdom of Saudi Arabia, Prince Naifbin Abdulaziz, Al Jamiah, Madinah, 42351, Kingdom of Saudi Arabia

    Abdullah Almohammedi

  3. Department of Physics, College of Sciences and Humanities, Shaqra University, Al Quwayiyah, 19257, Saudi Arabia

    Fahad N Almutairi

  4. Department of Chemical Engineering, College of Engineering, King Saud University, P.O. Box 800, Riyadh, 11421, Saudi Arabia

    Asif Mahmood

  5. Engineering research institute, Ulster University, Jordontown Newtownabbey, CoAustrim, Coleraine, BT37 0QB, UK

    Khalid Saeed

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  1. Syed Mansoor Ali
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Contributions

Conceptualization, SMA: methodology, MSA and SMA: analysis, HK and SSA: investigation, SMA and HK: writing-original draft preparation, SMA: Revision, SMA, AA, AM, KS, FNA.

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Correspondence to Syed Mansoor Ali.

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Ali, S.M., Almohammedi, A., AlGarawi, M.S. et al. Influence of Sn doping on the structure, optical, and electrical properties of p-type cuprous iodide thin films. J Mater Sci: Mater Electron 34, 125 (2023). https://doi.org/10.1007/s10854-022-09619-2

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