Abstract
A series of low-permittivity LiAl1 − xBxO2 (0.01 ≤ x ≤ 0.10) ceramics were fabricated by a conventional solid-state reaction method and were characterized for their phase evolution, crystal structure, and dielectric properties. Single-phase LiAl1 − xBxO2 solid solutions were formed at a limited compositional range (x = 0.05) while the secondary phase Li2(BAlO4) companied at higher dopant contents. Boron substitution facilitated the sintering behavior and optimized the densification of LiAlO2, resulting in dense microstructures and improved dielectric properties. A composition with x = 0.075 exhibited a high quality factor (Q×f) of 40,288 GHz along with a low relative permittivity (εr) of 6.3 and a temperature coefficient of resonance frequency (τf) of – 191 ppm/oC. All results indicate that the LiAl1 − xBxO2 ceramics can be a promising candidate material in the application of the substrate.
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Acknowledgements
Chunchun Li gratefully acknowledges the Fundamental Research Funds of Shaanxi Key Laboratory of Artificially-Structured Functional Materials and Devices (AFMD-KFJJ-21210) and the financial support from the Natural Science Foundation of China (No. 62061011) and Guangxi Key Laboratory Fund of Embedded Technology and Intelligent System (No. 2020-1-6).
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All authors contributed to the study’s conception and design. Material preparation, data collection, and analysis were performed by XC, DC, and FL. The first draft of the manuscript was written by XC and all authors commented on previous versions of the manuscript. LL, QS, and CL read and approved the final manuscript.
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Cao, X., Chen, D., Li, F. et al. Boron substitution in LiAlO2 to facilitate densification and tune dielectric properties. J Mater Sci: Mater Electron 34, 145 (2023). https://doi.org/10.1007/s10854-022-09530-w
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DOI: https://doi.org/10.1007/s10854-022-09530-w