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Variation of electrical and dielectric characteristics of Schottky diodes (SDs) depending on the existence of PVC and carbon-nanotube (CNT)-doped PVC interlayers

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Abstract

Here, the effects of PVC and carbon-nanotube (CNT)-doped PVC interlayers on the electrical and dielectric properties of Au/(n-Si) Schottky diode (SD) were investigated through the current/voltage (I−V) and impedance–frequency (Z–f) data. Ideality factor (n), barrier height (ΦB), rectification ratio (RR), series (RS), and shunt (RSh) resistance were evaluated from the I−V plots using a variety of methods. The interlayer effects on the surface states (NSS) of the structure were investigated via voltage-dependent n and ΦB values. Lastly, current conduction mechanisms of the structures for both reverse and forward voltages were determined. Dielectric characteristics for instance complex-dielectric constant (ε*), complex-electric modulus (M*), and ac electrical conductivity (σac), and RS values were designated from the Z–f measurements. Experimental results reveal that the favorable effects of the presence of PVC and PVC:CNT interlayers on the properties of the MS structure and so can be good candidates for electronic applications instead of the traditional MS structure.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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    Esra Erbilen Tanrıkulu

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Erbilen Tanrıkulu, E. Variation of electrical and dielectric characteristics of Schottky diodes (SDs) depending on the existence of PVC and carbon-nanotube (CNT)-doped PVC interlayers. J Mater Sci: Mater Electron 34, 63 (2023). https://doi.org/10.1007/s10854-022-09479-w

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