Abstract
Indium sulphide (In2S3) thin films were successfully deposited on glass substrates with different carrier gas pressures from 0.6 to 1.2 kg/cm2 at an optimized substrate temperature of 300 °C using a Nebulized Spray Pyrolysis (NSP) method. For structural, optical, surface morphological and electrical analysis of as-deposited films were subjected to X-ray diffraction (XRD), UV–vis spectrophotometer, Scanning Electron Microscopy (SEM) and Hall effect measurement. According to X-ray diffraction (XRD) studies, the produced films are nanocrystalline with the (103) plane as the preferred orientation and a tetragonal structure. The crystallite sizes vary between 21.25 and 42.41 nm. According to optical measurements, the assessed energy band of the layers varied between 2.71 and 2.78 eV. The maximum dielectric constant was obtained for the film deposited at 1.0 kg/cm2 of carrier gas pressure. According to SEM analysis, the as-deposited films are uniform, homogeneous and free of crystal defects and voids. Carrier gas pressure has a substantial impact on the structural, optical, electrical and morphological features of deposited In2S3 thin films according to the results.
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SSH: Investigation, Methodology, Writing—original draft; LA: Methodology, Conceptualization, Data curation; BB: Writing—review & editing; SSZ: Review & editing; JRM: Investigation, Methodology.
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Hameed, S.S., Balayazhini, B., Amalraj, L. et al. Impact of carrier gas pressures in the formation of (103) oriented In2S3 nanocrystalline thin films by Nebulized Spray Pyrolysis method. J Mater Sci: Mater Electron 34, 49 (2023). https://doi.org/10.1007/s10854-022-09413-0
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DOI: https://doi.org/10.1007/s10854-022-09413-0