Abstract
Anisotropic magnetoresistance (AMR) sensors with a flexible substrate are presented in this paper. The AMR sensors were fabricated on polyimide (PI) material in a surface micromachining process, and the minimum linewidth of the sensors was reduced to 3 μm by optimization of the process. An orthogonal-arranged Wheatstone bridge structure was proposed to improve the voltage output, and the AMR strips in series–parallel connection were designed to improve the sensitivity. The AMR sensors with Wheatstone bridge show high linearity, sensitivity, and voltage output performance by measurement. A maximum Wheatstone bridge voltage output of about 0.07 mV was achieved for 0.5 V bias in the magnetic field of 100 Gs, and the sensitivity value of about 1.5 Gs−1 was obtained. Moreover, the AMR sensors had good robustness upon mechanical bending, and a maximum bend radius of about 2.3 cm was achieved. The research results demonstrated the feasibility of manufacturing high-performance small-sized AMR sensors on flexible substrates and showed great potential for magnetic field detection in non-planar applications.
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References
J.T. Yu, L. Sun, Y. Xiao, S.W. Jiang, W.L. Zhang, Electron. Compon. Mater. 38, 6 (2019)
Y.H. Chai, Y.X. Guo, W. Bian, W. Li, T. Yang, M.D. Yi, Q.L. Fan, L.H. Xie, W. Huang, Acta Phys. Sin. 63, 2 (2014). https://doi.org/10.7498/aps.63.027302
G.Z. Shen, Prog. Nat. Sci. 31, 6 (2021). https://doi.org/10.1016/j.pnsc.2021.10.005
L. Jogschies, D. Klaas, R. Kruppe, J. Rittinger, P. Taptimthong, A. Wienecke, L. Rissing, M.C. Wurz, Sensors 15, 11 (2015). https://doi.org/10.3390/s151128665
C. Reig, M.D. Cubells-Beltran, D.R. Munoz, Sensors 9, 10 (2009). https://doi.org/10.3390/s91007919
X. Liu, Z.L. Song, R. Wang, Z.Y. Quan, Adv. Condens. Matter Phys. (2016). https://doi.org/10.1155/2016/8528617
E. Demirci, J. Supercond. Nov. Magn. 33, 12 (2020). https://doi.org/10.1007/s10948-020-05646-4
N.H. Zheng, X. Wang, Y.H. Zheng, D. Li, Z.Z. Lin, W.F. Zhang, K.J. Jin, G. Yu, Adv. Mater. Interfaces 7, 18 (2020). https://doi.org/10.1002/admi.202000868
B. Jana, K. Ghosh, K. Rudrapal, P. Gaur, P.K. Shihabudeen, A.R. Chaudhuri, Front. Phys. (2022). https://doi.org/10.3389/fphy.2021.822005
J. Gaspar, H. Fonseca, E. Paz, M. Martins, J. Valadeiro, S. Cardoso, R. Ferreira, P.P. Freitas, IEEE Trans. Magn. 53, 4 (2017). https://doi.org/10.1109/TMAG.2016.2623669
S. Ota, A. Ando, D. Chiba, Nat. Electron. 1, 2 (2018). https://doi.org/10.1038/s41928-018-0022-3
E.S.O. Mata, G.S.C. Bermudez, M. Ha, T. Kosub, Y. Zabila, J. Fassbender, D. Makarov, Appl. Phys. A 127, 4 (2021). https://doi.org/10.1007/s00339-021-04411-1
A. Persson, R.S. Bejhed, H. Nguyen, K. Gunnarsson, B.T. Dalslet, F.W. Osterberg, M.F. Hansen, P. Svedlindh, Sens. Actuator A 171, 2 (2011). https://doi.org/10.1016/j.sna.2011.09.014
C.Y. Wang, W. Su, Z.Q. Hu, J.T. Pu, M.M. Guan, B. Peng, L. Li, W. Ren, Z.Y. Zhou, Z.D. Jiang, M. Liu, IEEE Trans. Magn. 54, 11 (2018). https://doi.org/10.1109/TMAG.2018.2846758
L.J. Wang, J. Univ. Sci. Technol. Beijing 28, 8 (2006)
A. Bedoya-Pinto, M. Donolato, M. Gobbi, L.E. Hueso, P. Vavassori, Appl. Phys. Lett. 104, 6 (2014). https://doi.org/10.1063/1.4865201
Z.G. Wang, X.J. Wang, M.H. Li, Y. Gao, Z.Q. Hu, T.X. Nan, X.F. Liang, H.H. Chen, J. Yang, S. Cash, N.X. Sun, Adv. Mater. 28, 42 (2016). https://doi.org/10.1002/adma.201602910
C.H. Lai, H. Matsuyama, R.L. White, T.C. Anthony, IEEE Trans. Magn. 31, 6 (1995). https://doi.org/10.1109/20.490068
Y. Saito, K. Inomata, K. Yusu, A. Goto, H. Yasuoka, Phys. Rev. B 52, 9 (1995). https://doi.org/10.1103/PhysRevB.52.6500
W. Thomson, Proc. R. Soc. Lond. (1876). https://doi.org/10.1098/rstl.1876.0026
J. Neamtu, M. Volmer, A. Coraci, IEEE (1998). https://doi.org/10.1109/SMICND.1998.732348
J. Mouchot, P. Gerard, B. Rodmacq, IEEE Trans. Magn. 29, 6 (1993). https://doi.org/10.1109/20.280928
Acknowledgements
This work was supported by the Jiangsu Provincial Key Research and Development Program (BE2020006-1), the Natural Science Foundation of Jiangsu Province (BK20171355), and the Fundamental Research Funds for the Central Universities.
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Funding was provided by Jiangsu Provincial Key Research and Development Program (BE2020006-1), Natural Science Research of Jiangsu Higher Education Institutions of China (BK20171355) and Fundamental Research Funds for the Central Universities.
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All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by JC and ZZ. The first draft of the manuscript was written by JC and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
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Chen, J., Zhang, Z. A flexible anisotropic magnetoresistance sensor for magnetic field detection. J Mater Sci: Mater Electron 34, 73 (2023). https://doi.org/10.1007/s10854-022-09400-5
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DOI: https://doi.org/10.1007/s10854-022-09400-5