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Synaptic plasticity in electro-polymerized PEDOT based memristors for neuromorphic application

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Abstract

A polymer based memristor as an artificial synapse has been one proficient approach to mimic biological synapse. It remembers the last state and modulate the output accordingly with subsequent voltage signals at low voltages and at high processing speeds. A functional layer of poly(3,4-ethylenedioxythiophene) (PEDOT) polymer is deposited by electro-polymerization using cyclic voltammetry. Here, we studied Pt/PEDOT/Al based memristor, which exhibited excellent artificial synapse like plasticity. We discuss the basic function of remembering and forgetting of the devices through synapticity and plasticity. STDP, which is the most important Hebbian learning rule for learning and memory showed up to 75% change in synaptic weight under wide range of input signals. The devices show excellent plasticity behavior mimicking biosynaptic behavior, which makes them a suitable system for neuromorphic applications.

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All data generated or analyzed during the current study are included in the manuscript or available from the corresponding author.

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Funding

N.S. would like to thank Council for Scientific and Industrial Research (CSIR) grant under senior research fellowship (SRF) for financial support. This research was funded by CSIR-NPL research support.

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Authors and Affiliations

  1. CSIR-National Physical Laboratory, Dr. KS Krishnan Marg, New Delhi, 110012, India

    Nitish Saini, Arti Bisht, Asit Patra & Ajeet Kumar

  2. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India

    Nitish Saini, Arti Bisht, Asit Patra & Ajeet Kumar

Authors
  1. Nitish Saini
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  2. Arti Bisht
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Contributions

AP prepared the PEDOT thin films. NS and AB did measurements. NS did data analysis and writing manuscript. AK did overall planning, editing, and supervision of work.

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Correspondence to Ajeet Kumar.

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Saini, N., Bisht, A., Patra, A. et al. Synaptic plasticity in electro-polymerized PEDOT based memristors for neuromorphic application. J Mater Sci: Mater Electron 33, 27053–27061 (2022). https://doi.org/10.1007/s10854-022-09368-2

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  • DOI: https://doi.org/10.1007/s10854-022-09368-2

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