Abstract
In this study, 1 wt% Bi2O3 (1B), 1 wt% ZnBi2O4 (1BZ), and a composite (mixture of 1 wt% Bi2O3 and 2 wt% ZnBi2O4, 1B2BZ) were added to ZnO-Co3O4-Mn3O4 varistors to investigate the effects of additives and cooling rate on the densification, microstructure, and varistor performance. Adding ZnBi2O4 can promote densification and lower the sintering temperature to 850oC. The α value was improved when the cooling rate was slow. Adding ZnBi2O4 promotes the transfer of the electrons resulting from the oxidation of Mn2+ and Co2+ to the ZnBi2O4 surfaces and reaction with oxygen to produce adsorbed oxygen, thus having a higher Schottky barrier and α value. At the slow cooling rate, O2 has sufficient time to diffuse to the interior via the grain boundaries and react with the electrons resulting from the oxidation of Mn2+ and Co2+ rich in grain boundaries to form adsorbed oxygen, which can improve the performance of the varistor. For the sintered 1BZ with a cooling rate of 2 ˚C/min, an α value of 65, a breakdown field strength of 1361 V/mm, and a leakage current of 30 µA/m2 were obtained.
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The research is partially supported by the fund of the Ministry of Science and Technology Taiwan (MOST 110-2622-8-006 -017 -SB).
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Ministry of Science and Technology (MOST) in Taiwan (110-2622-8-006 -017 -SB).
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Conceptualization, HIH and CCC; methodology, CCK, and MC; validation, HIH, and CCK; formal analysis, CCK; investigation, CCK; resources, HIH; data curation, CCK; writing—original draft preparation, HIH; writing—review and editing, HIH and CCC; visualization, HIH; supervision, HIH and CCC; project administration, HIH; funding acquisition, HIH and CCC. All authors have read and agreed to the published version of the manuscript.
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Hsiang, HI., Chen, CC. & Kao, CC. Effect of ZnBi2O4 and Bi2O3 addition on the microstructure and electrical properties of ZnO–Co3O4–Mn3O4 varistors. J Mater Sci: Mater Electron 33, 26834–26840 (2022). https://doi.org/10.1007/s10854-022-09348-6
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DOI: https://doi.org/10.1007/s10854-022-09348-6