Abstract
Transparent ITO/PZT/ITO capacitors were fabricated on 200 mm glass substrate. The PZT films of 1 µm and 2 µm thickness were first grown on platinized Si wafer by sol–gel method, and then transferred onto glass substrate together with ITO electrodes following an innovative process. The obtained PZT based stacks on glass show an average transmission of about 70% in the visible range. PZT films keep their preferred (100) orientation after transfer process. The capacitors exhibit ferroelectric, dielectric and piezoelectric properties comparable to standard non-transparent PZT films with metal electrodes. Transverse piezoelectric coefficient e31,f as high as 16 C/m2 was measured for both PZT film thicknesses. This proof of concept opens the way to the fabrication of transparent piezoelectric actuators on glass for high performances haptic devices, as well as for other emerging applications like self-cleaning or functionalization of smart windows.
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The data that support the findings of this study are available from the corresponding author upon reasonable request.
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GLR, FP, BW and CD contributed to the study conception and design. All authors were involved in all or part of the material preparation, data collection and analysis. The first draft of the manuscript was written by GLR and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
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Le Rhun, G., Pavageau, F., Wagué, B. et al. Highly transparent PZT capacitors on glass obtained by layer transfer process. J Mater Sci: Mater Electron 33, 26825–26833 (2022). https://doi.org/10.1007/s10854-022-09347-7
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DOI: https://doi.org/10.1007/s10854-022-09347-7