Abstract
A study on Ba2Ti9O20 and SiO2 ceramic powder-filled polybutadiene (PB) composite substrates was conducted in this paper. The total content of ceramic fillers was a fixed value of 85 wt.% and the SiO2 content varied from 5 to 25 wt.%. The analyses of FTIR, XPS, TEM, Contact Angle testing, and SEM were performed to study the surface characteristics of Vinyltrimethoxysilane (A171)-modified Ba2Ti9O20. The microstructure of composite substrates displayed that Ba2Ti9O20 and SiO2 ceramic fillers distributed in PB homogeneously with a small amount of SiO2 addition. However, SiO2 filler particles agglomerated and poorly dispersed in composites with 25 wt.% SiO2 loading. Furthermore, the effects of SiO2 filler loading on density, porosity, dielectric properties, and mechanical properties of composites were investigated in detail. Last, the composites exhibited medium dielectric constant \((\varepsilon_{r} = 7.32),\) low dielectric loss \({\text{(tan }}\delta { = 0}{\text{.002),}}\) near-zero temperature coefficient of dielectric constant (\(\tau_{\varepsilon } = - \,8.07 {\text{ppm}}/^\circ {\text{C}}\)) at a high frequency of 10 GHz, relatively low porosity (1.36%), and acceptable bending strength (75.26 MPa) at 65 wt.% Ba2Ti9O20 and 20 wt.% SiO2 fillers loading.
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Acknowledgements
This work was supported by China Zhenhua Group Yunke Electronic Co., Ltd. (Guiyang, Guizhou, China) and West China School of Stomatology Sichuan University (Chengdu, Sichuan, China).
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SY and YY contributed to the conception and design of the study. SY, JY, and BT performed material preparation. SY performed the experiment and data collection. ZY, EL, and YY helped to perform the analysis with constructive discussions. The first draft of the manuscript was written by SY and all authors commented on the previous versions of the manuscript. All authors read and approved the final manuscript.
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Yang, S., Yang, Z., Yang, J. et al. Research on Ba2Ti9O20-filled polybutadiene composites with near-zero temperature coefficient of dielectric constant by SiO2 addition. J Mater Sci: Mater Electron 33, 25463–25474 (2022). https://doi.org/10.1007/s10854-022-09250-1
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DOI: https://doi.org/10.1007/s10854-022-09250-1