Abstract
Monoclinic structures of pristine and Sm-doped CuO compounds are synthesized by solid-state reaction process. The energy band gap observed from diffused reflectance spectra for pristine CuO is 1.429 eV which decreases from 1.426 eV to 1.385 eV as the doping of Sm-ion is increased from 1 to 10% in Sm-doped CuO compounds, respectively. Temperature-dependent DC electrical resistivity of pristine and CuO compounds is studied by using Arrhenius model, pristine and Sm-doped CuO compounds confirm the semiconducting nature with the decrease in electrical resistivity and activation energy as the doping percentage of Sm-ion is increased in Sm-doped CuO compounds. Band conduction model, and variable range hopping (VRH) model explains the conduction mechanism of CuO and Sm-doped CuO compounds in high temperature range (162–205 K) and low temperature range (114–162 K), respectively. Rectification ratio, polarization resistance and ideality factor are calculated at room temperature for pristine and Sm-doped CuO compounds using Tafel plots. Decrease in polarization resistance, ideality factor of pristine and Sm-doped CuO compounds with increase in dopant (Sm) ion concentration is observed which may be attributed to creation of more charge carriers with doping.
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The authors acknowledge Material Science Division, IUAC, New Delhi and UGC-DAE COSORTIUM, Indore for providing the characterization facilities.
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Yadav, R., Goyal, D.P., Kumar, V. et al. Effect of Samarium doping on electrical conductivity of cupric oxide compound. J Mater Sci: Mater Electron 33, 25392–25403 (2022). https://doi.org/10.1007/s10854-022-09245-y
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DOI: https://doi.org/10.1007/s10854-022-09245-y