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The transport properties and large magnetoresistance effect in Pr0.7Sr0.3MnO3 film on SrTiO3

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Abstract

The transport properties and magnetoresistance (MR) effect of Pr0.7Sr0.3MnO3 (PSMO) film on SrTiO3 (STO) substrate are investigated in this work. The PSMO film is grown on (001) STO substrate by pulsed laser deposition (PLD). The high-resolution X-ray diffraction (XRD) pattern suggests that the Pr0.7Sr0.3MnO3 film shows the out-of-plane single orientation. Atomic force microscopy (AFM) image shows that the surface of the film is smooth. In addition, the significant interference peaks can be found in the XRD. All these confirm the high quality of the PSMO film grown on STO substrate to some extent. The magnetotransport properties and the MR associated to the double exchange (DE) interactions of the Pr0.7Sr0.3MnO3 film have been studied by the resistivity versus temperature and resistivity versus magnetic field data. The temperature dependence of resistivity shows that the film sample undergoes a metal-to-insulator (MI) transition at MI temperature TMI. The TMI gradually increases with the increase of applied magnetic field. Under different fields of 1 T, 2 T, 4 T and 6 T, the maximum values of negative MR (MR = [ρ-ρ0/ρ0] × 100%) reveal about 47.16%, 53.16%, 86.59% and 92.22%, respectively. Compared with other reports on bulk polycrystalline PSMO compounds and polycrystalline PSMO films, the PSMO film on STO in our work has relatively large MR, which is related to the single-oriented growth of PSMO/STO film. The large MR is conducive to the practical applications in magneto-electronic devices. The applied magnetic field dependence of resistivity shows that near TMI, the resistance changes significantly with the change of the applied field. This also implies that there is a large MR at around TMI, which can be explained by the traditional DE mechanism.

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All data generated or analyzed during this study are available from the corresponding author on reasonable request.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 11604067, U1832143) and the Zhejiang Provincial Natural Science Foundation of China (No. LY20E040001). We would like to thank colleagues from Beijing Synchrotron Radiation Facility (BSRF) and Shanghai Synchrotron Radiation Facility (SSRF) for their help.

Funding

The funded was provided by National Natural Science Foundation of China (Grant Nos. 11604067, U1832143) and Zhejiang Provincial Natural Science Foundation of China (Grant No. LY20E040001).

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Authors and Affiliations

  1. Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Institute of Material Physics, Hangzhou Dianzi University, Hangzhou, 310018, China

    Yan Wang, Xiaojie Hu, Haiou Wang, Kunpeng Su, Dexin Yang, Shuai Huang & Dexuan Huo

  2. All-Solid-State Energy Storage Materials and Devices Key Laboratory of Hunan Province, College of Information and Electronic Engineering, Hunan City University, Yiyang, 413002, China

    Weishi Tan

  3. Faculty of Applied Technology, Huaiyin Institute of Technology, Huaian, 223003, China

    Hao Liu

  4. Key Laboratory of Soft Chemistry and Functional Materials, Ministry of Education, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, 210094, China

    Haiou Wang, Weishi Tan & Hao Liu

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  1. Yan Wang
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  8. Hao Liu
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  9. Dexuan Huo
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Contributions

YW and XH: were the executors of the experimental investigation. They collected the data and written the original draft; KS, DY and HS: participated in the experimental design and the data analysis; HW and DH: were the leaders of the project, guiding experimental design, data collation and analysis, article writing and revision; WT and HL: were involved in the analysis and collation of the literature. All authors read and agreed on the final manuscript.

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Correspondence to Haiou Wang or Dexuan Huo.

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Wang, Y., Hu, X., Wang, H. et al. The transport properties and large magnetoresistance effect in Pr0.7Sr0.3MnO3 film on SrTiO3. J Mater Sci: Mater Electron 33, 23834–23840 (2022). https://doi.org/10.1007/s10854-022-09141-5

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