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Intrinsic properties of metallic edge states in MoS2 nanobelt

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Abstract

Low-dimensional transition metal dichalcogenides (TMDs) represented by MoS2 have attracted attraction due to their unique structural, physical, and chemical properties. In this work, one-dimensional (1D) MoS2 nanobelts were firstly synthesized on SiO2/Si substrate via chemical vapor deposition (CVD) method. The base planes of MoS2 nanobelt vertically stand on the substrate, which makes the layer edges form the top surface of the nanobelt. By using the micro- and nanoscale fabrication processing, we fabricated field-effect transistor (FET) based on MoS2 nanobelt. The transfer characteristics of the top-gated device indicates that gate modulation in the MoS2 edges is negligible, and the MoS2 edges are found to be a hole metal with the mobility of ~ 0.0023 m2/V·s. The device with zero gate voltage exhibits the carrier concentration of ~ 3.20 × 1013 cm− 2 and resistivity of ~ 8.59 × 104 Ω. The results firstly demonstrate the intrinsic transport properties of metallic edge states in MoS2 nanobelts, which might facilitate the application of MoS2 metallic edges in other aspects in the future.

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Data availability

The data sets generated and analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

This work was supported by the National Natural Science Foundation of China (NSFC) (12104343), Anhui Provincial Natural Science Foundation (1908085QE180), and Natural Science Fund of Education Department of Anhui Province (KJ2021A0938, KJ2020ZD57).

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Authors and Affiliations

  1. Key Laboratory of Biomimetic Sensor and Detecting Technology of Anhui Province, School of Materials and Chemical Engineering, West Anhui University, Lu’an, 237012, Anhui, People’s Republic of China

    Lei Yang, Xueqin Yuan, Renyong Liu, Ping Wu, Yu Zhong & Wengui Chang

  2. College of Biological and Pharmaceutical Engineering, West Anhui University, Lu’an, 237012, Anhui, People’s Republic of China

    Fucheng Zhu

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  1. Lei Yang
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  2. Xueqin Yuan
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  5. Yu Zhong
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  6. Fucheng Zhu
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  7. Wengui Chang
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Contributions

All authors contributed to the study conception and design. Material preparation, optical image characterizations, AFM characterizations, and electronic transport measurements were performed by LY, XY, and WC. TEM characterizations were performed by PW and YZ. Raman and PL measurements were performed by RL and FZ. The first draft of the manuscript was written by LY and all the authors commented on previous versions of the manuscript. All the authors read and approved the final manuscript.

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Correspondence to Lei Yang or Wengui Chang.

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Yang, L., Yuan, X., Liu, R. et al. Intrinsic properties of metallic edge states in MoS2 nanobelt. J Mater Sci: Mater Electron 33, 23722–23728 (2022). https://doi.org/10.1007/s10854-022-09131-7

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  • DOI: https://doi.org/10.1007/s10854-022-09131-7

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