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Effect of La2O3 doping on microstructure and electrical properties of flash-sintered ZnO-Bi2O3 varistor

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Abstract

The crystal phase combination, relative density, microstructure, varistor properties and dielectric properties of La2O3-doped ZnO-Bi2O3-based varistor at a furnace temperature of 950 °C were investigated under the electric field of 300 V/cm within 35 s. Obtained samples were fully densified and uniform in microstructure. The effect of doping with different contents of La2O3 on flash-sintered ZnO-Bi2O3-based varistor was systematically studied. The results showed that when doping La2O3 was 0 mol%, 0.1 mol%, 0.2 mol% and 0.3 mol%, the densities of the samples were 91.5%, 90.5%, 96.1% and 95.1%, respectively. When the La2O3 doping amount was 0.2 mol%, the nonlinear coefficient was the highest of 32.9, the leakage current was the lowest of 1.1μA, and the dielectric loss was less than 0.1. Therefore, uniform microstructure and excellent electrical property can be obtained by preparing La2O3-doped ZnO varistor ceramic via flash sintering.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Funding

National Natural Science Foundation of China, 52072004, Dong XU, the Key Research and Development Program of Anhui Province, 2022i01020008, Dong XU, State Key Laboratory of Advanced Materials and Electronic Components,FHR-JS-202011006,Dong XU

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Authors and Affiliations

  1. School of Materials Science and Engineering, Anhui Polytechnic University, Wuhu, 241000, People’s Republic of China

    Mengyang Shi & Zhentao Wang

  2. School of Materials Science and Engineering, Anhui University of Technology, Maanshan, 243002, People’s Republic of China

    Mengyang Shi, Zhentao Wang, Qun He & Dong Xu

  3. Zhengzhou Research Institute of Mechanical Engineering Co., Ltd, Zhengzhou, 450001, People’s Republic of China

    Lei Zhang, Zhan Cheng, Jian Qin, Yongtao Jiu & Dong Xu

  4. State Key Laboratory of Advanced Materials and Electronic Components, Zhaoqing, 526000, People’s Republic of China

    Bin Tang

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  1. Mengyang Shi
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  2. Lei Zhang
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  3. Zhan Cheng
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  4. Zhentao Wang
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  9. Dong Xu
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Contributions

MS contributed to conceptualization, methodology, experiment, writing. LZ contributed to draft visualization, experiment, analyzing, writing. ZC contributed to investigation, preparation, analyzing, writing. ZW contributed to supervision. QH contributed to data curation. JQ contributed to investigation. YJ contributed to investigation. BT contributed to conceptualization. DX contributed to guiding. All authors read the paper and commented on the text.

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Correspondence to Dong Xu.

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Shi, M., Zhang, L., Cheng, Z. et al. Effect of La2O3 doping on microstructure and electrical properties of flash-sintered ZnO-Bi2O3 varistor. J Mater Sci: Mater Electron 33, 23437–23446 (2022). https://doi.org/10.1007/s10854-022-09105-9

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