Abstract
High-performance 0.7Bi1.02FeO3–0.3BaTiO3 ceramics are prepared by traditional solid-state method with annealing. The effect of annealing temperature (TA) on the piezoelectric properties of ceramics are revealed by studying the crystal structures, ferroelectric properties, and electrical properties of the as-sintered ceramic and ceramics annealed at 600, 700, 800, and 900 °C. Through the analysis, we found that TA has little influence on the morphology and crystal structure of ceramics, all ceramics are two-phase (R-PC) coexistence structures. But TA relates to the concentration of charge defects. When annealing at 800 °C, the charge defects in the ceramic are the least. Therefore the best performance (d33 = 202 \(\pm\) 3 pC/N, TC = 496 °C) ceramic is obtained. Our experiments demonstrate that the charge defects induced by annealing temperature are very important to the piezoelectricity of BFO–BTO ceramics.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (Grant No. 9196320), Natural Science Foundation of Gansu Province (Grant No. 20JR5RA300), and Audiowell Sensor Technology (Guangdong) Co., Ltd. (Grant No. 505000-071100116). The all authors are grateful to the Key Laboratory for Magnetism and Magnetic Materials of MOE. This work was supported by Lanzhou University.
Funding
The funded was provided by National Natural Science Foundation of China (Grant No. 9196320(, Natural Science Foundation of Gansu Province (Grant No. 20JR5RA300), Audiowell Sensor Technology (Guangdong) Co., Ltd. (Grant No. 505000-071100116).
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In this work, MG provided the experimental platform, and gave some significant modification suggestions for the article. TY completed the experiment in this paper and wrote this article. SJ provided some effective suggestions for writing articles and drawing charts. YQ helped complete the SEM test. FL provided some help in sample preparation. And BY offered some suggestions on English grammar.
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Yu, T., Jiang, S., Qiao, Y. et al. The enhanced piezoelectricity of 0.7BiFeO3–0.3BaTiO3 by optimizing charge defects through annealing. J Mater Sci: Mater Electron 33, 24038–24047 (2022). https://doi.org/10.1007/s10854-022-09009-8
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DOI: https://doi.org/10.1007/s10854-022-09009-8