Abstract
Nanoindentation studies on bulk and epitaxial semiconductor crystals have been reviewed in general. The common materials of technological interest such as Si, Ge, GaAs, GaN, InP, CdZnTe, HgCdTe etc. have been included. Issues related with the measurement and analysis of load–displacement characteristics have been discussed in detail, including those for cyclic nanoindentation and continuous stiffness measurements. Common mistakes/oversights in the extraction of mechanical properties, particularly for the elastic modulus, have been highlighted. Various features observed in load–displacement curves are discussed in connection with different semiconductor materials. These include pop-in/pop-out events and serrations observed in general, and the open-jaw and hysteresis like features in cyclic nanoindentation. Cathodoluminescence studies on indented surfaces have also been included to highlight the deformation behaviour of some of the crystalline semiconductor materials.
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Acknowledgements
The authors thank Director, Solid State Physics Laboratory, Delhi for permitting to publication this work. The authors greatly acknowledge the contribution of Dr. A. K. Kapoor and Mr. Anand Kumar in providing CL images of the CdZnTe single crystals presented here.
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All authors contributed in the understanding of concepts and data analysis of reported result. The First draft was prepared by HKS and all authors provided their valuable feedback and suggested corrections. RKS and RP has helped to analysing the results of CL and pressure-induced phase transformation. RSS has helped in performing mathematical analysis.
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Sharma, H.K., Sharma, R.K., Saxena, R.S. et al. A review of nanoindentation and related cathodoluminescence studies on semiconductor materials. J Mater Sci: Mater Electron 33, 21223–21245 (2022). https://doi.org/10.1007/s10854-022-08995-z
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DOI: https://doi.org/10.1007/s10854-022-08995-z