Abstract
(Zr0.8Sn0.2)TiO4 (ZST) ceramics were prepared by solid-phase method. The effects of MgO/La2O3/Nb2O5 doped on the phase composition, microstructure, sintering behavior, and microwave dielectric properties of ZST ceramics were investigated. XRD analysis showed that the major crystalline phase was ZST. Very small amounts of phases, Nb2O5 and Mg(Ti2O5), were observed when dopants were added, and Nb2O5 inhibited the formation of Mg(Ti2O5). The results showed that upon adding 7 wt% Nb2O5 and small amounts of MgO and La2O3 to the ceramics, the permittivity of the ceramics was greatly reduced compared to that of other oxide-doped (Zr, Sn)TiO4 ceramic materials, and the Q × f value was also increased. The coefficients of thermal expansion of ZST ceramics in this study were within the range reported in the literature. Optimal dielectric properties, εr = 34.78, Q × f = 55,190 GHz (f = 5.8 GHz), τf = − 13.86 ppm/°C, and CTE = 7.0 ppm/°C, were achieved for the sample with 7 wt% Nb2O5 sintered at 1330 °C for 2 h.
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Acknowledgements
This work was financed by Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), the National Natural Science Foundation of China (Grant No. 52102089), and Key Research and Development Program of Zhejiang Province (Grant No. 2020C0112, 2021C01092)
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This work was financed by Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), the National Natural Science Foundation of China (Grant No. 52102089), and Key Research and Development Program of Zhejiang Province (Grant Nos. 2020C0112, 2021C01092).
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All authors contributed to the study conception and design. XZ and CL contributed to the conception of this study, performed the experiment, analyzed the data, and wrote the manuscript. YL, YS, XL, QX, and HZ help perform the analysis with constructive discussions. All authors read and approved the final manuscript.
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Zhang, X., Li, C., Lu, Y. et al. Microstructure and microwave dielectric properties of multi-oxide-doped (Zr, Sn)TiO4 ceramics. J Mater Sci: Mater Electron 33, 22153–22161 (2022). https://doi.org/10.1007/s10854-022-08994-0
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DOI: https://doi.org/10.1007/s10854-022-08994-0