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Low-frequency noise and impedance spectroscopy of device structures based on perovskite-graphene oxide composite films

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Abstract

We present the results of studies of low-frequency noise and impedance spectroscopy (IS) in operating planar structures based on films of organic-inorganic halide perovskite CH3NH3PbBr3 with and without embedded graphene oxide (GO) flakes as active layers of field-effect transistors and memory chips. It is shown that 1/f flicker noise dominates at low frequencies, while white shot-noise resulting from dark current fluctuations is the limiting noise at high frequencies. It is demonstrated that at similar currents the current noise power spectral density, SI, values are lower by factor ~ 4 for the film CH3NH3PbBr3:GO with respect to that for the film CH3NH3PbBr3 without GO flakes, thus it is concluded that GO flakes act as a trap passivation. The IS results show that under identical conditions the Cole-Cole plots for both films are in good agreement with the equivalent circuit model and represents series resistance, recombination resistance and geometric capacitance, respectively, which arise due to charge accumulation, charge transfer resistance and/or additional interfacial electronic states. The decrease in the noise density by factor 4 in the perovskite films with GO flakes is attributed to the higher conductivity of these films as well as to more uniform distribution of carriers over the sample cross section. The obtained results provide the way to improve the performance of next generation of organic-inorganic perovskite optoelectronic devices.

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Data availability

The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

The authors grateful M.E. Levinshtein for helpful discussions and A.V. Klochkov for the design and software of the setup for measuring the density of low-frequency noise.

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The authors did not receive support from any organization for the submitted work.

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  1. Ioffe Institute, St. Petersburg, Russia, 194021

    A. M. Ivanov, G. V. Nenashev & A. N. Aleshin

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  1. A. M. Ivanov
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  3. A. N. Aleshin
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by AMI, GVN and ANA. The first draft of the manuscript was written by AMI, GVN and ANA and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to A. N. Aleshin.

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Ivanov, A.M., Nenashev, G.V. & Aleshin, A.N. Low-frequency noise and impedance spectroscopy of device structures based on perovskite-graphene oxide composite films. J Mater Sci: Mater Electron 33, 21666–21676 (2022). https://doi.org/10.1007/s10854-022-08955-7

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