Abstract
In this paper, two kinds of one-dimensional (1D) silicon carbide (SiC) fillers, including silicon carbide whiskers (SiCw) and silicon carbide nanowires (SiCn) were filled into silicone rubber (SiR), respectively. The effect of 1D-SiC fillers on the microstructure and electrical, thermal, and mechanical properties of the SiCw/SiR and SiCn/SiR composite dielectrics have been systematically studied. The results show that the SiCn/SiR composites exhibit excellent nonlinear conductivity and thermal properties as compared to the SiCw/SiR composites due to the relatively large length−diameter of SiCn, with a maximum nonlinear coefficient and thermal conductivity of 0.69 and 0.229 W/(m·K), respectively and stronger mechanical property. However, the DC breakdown strength degrades seriously with the increase in the 1D-SiC filler content. The measuring temperature also has a significant effect on the DC conductivity and DC breakdown strength properties of the SiR-based composite dielectric. Besides, the internal electric field of the cable accessories was simulated using COMSOL Multiphysics software and the results verify that the use of both SiC/SiR-based composite dielectrics as reinforced insulation significantly homogenized the internal electric field of the cable attachment as compared to SiR, with a reduction of up to 96.75% in the electric field at the root of the stress cone under steady-state conditions.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (Nos. U20A20308, 51977050, 52007042), Natural Science Foundation of Heilongjiang Province (No. TD2019E002), China Postdoctoral Science Foundation (Nos. 2021T140166, 2018M640303), Youth Innovative Talents Training Plan of Ordinary Undergraduate Colleges in Heilongjiang (No. UNPYSCT-2020178, UNPYSCT-2020180).
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Chi, Q., Fang, H., Meng, Z. et al. Improved electrical, thermal, and mechanical properties of silicone rubber-based composite dielectrics by introducing one-dimensional SiC fillers. J Mater Sci: Mater Electron 33, 21336–21350 (2022). https://doi.org/10.1007/s10854-022-08928-w
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DOI: https://doi.org/10.1007/s10854-022-08928-w