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Enhancement of electrical properties by including nano-aluminum nitride to micro-silicon carbide/silicone elastomer composites for potential power module packaging applications

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Abstract

This paper reports an enhancement of the electrical properties of micro-silicon carbide/silicone elastomer (m-SiC/SE) composites by adding nano-aluminum nitride (n-AlN) for the next-generation power module encapsulation applications. The electrical properties, such as nonlinear conductivity, DC breakdown strength, dielectric spectroscopy, and thermally stimulated discharge current, of the pure SE, m-SiC/SE microcomposite, and m-SiC/n-AlN/SE hybrid composites added with 1 wt%, 3 wt%, and 5 wt% n-AlN fillers are investigated. The m-SiC/n-AlN/SE hybrid composites exhibit better nonlinear conductivity characteristics and enhanced DC breakdown strength than the m-SiC/SE microcomposite. Amongst all materials, the 3 wt% n-AlN addition in the hybrid composite has the best enhancement effect on the nonlinear conductivity characteristics and DC breakdown strength. However, it has the lowest low-frequency real and imaginary permittivities among the SE micro and hybrid composites. Furthermore, a m-SiC/n-AlN heterogenous interface model is proposed to explain the mechanism of enhanced electrical properties of the m-SiC/n-AlN/SE composites. It is found that higher m-SiC/n-AlN heterogenous interface barriers are constructed after adding n-AlN fillers, thereby inhibiting the charge carrier transport at low electric fields. In contrast, more conductive paths are activated at high electric fields by the contacted m-SiC fillers via n-AlN fillers, promoting the charge carrier transport at high electric fields.

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Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

This work was funded by the Key Project of Natural Science Foundation of Zhejiang Province (LZ22E070001), the National Natural Science Foundation of China (52007165), and the One-hundred Talents Program of Zhejiang University (A).

Funding

This work was supported by the Key Project of Natural Science Foundation of Zhejiang Province (Grant No: LZ22E070001), the National Natural Science Foundation of China (Grant No: 52007165), and the One-hundred Talents Program of Zhejiang University (Grant No: A).

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Authors and Affiliations

  1. College of Electrical Engineering, Zhejiang University, Hangzhou, 310027, China

    Xiangrong Chen, Qilong Wang, Xiaofan Huang & Awais Muhammad

  2. ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, 311200, China

    Xiangrong Chen, Qilong Wang, Awais Muhammad & Na Ren

  3. Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 311200, China

    Xiangrong Chen

  4. Advanced Electrical International Research Center, International Campus, Zhejiang University, Haining, 314400, China

    Xiangrong Chen

  5. Electrical Engineering Department, National Institute of Technology, Silchar, 788010, India

    Ashish Paramane

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  1. Xiangrong Chen
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Contributions

Material preparation, data collection and analysis were performed by Qilong Wang and Xiaofan Huang. The first draft of the manuscript was written by Qilong Wang. Funding acquisition and review and editing were performed by Xiangrong Chen and Na Ren. Review and editing were performed by Awais Muhammad and Ashish Paramane. All authors read and approved the final manuscript

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Correspondence to Xiangrong Chen.

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Chen, X., Wang, Q., Huang, X. et al. Enhancement of electrical properties by including nano-aluminum nitride to micro-silicon carbide/silicone elastomer composites for potential power module packaging applications. J Mater Sci: Mater Electron 33, 18768–18785 (2022). https://doi.org/10.1007/s10854-022-08726-4

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  • DOI: https://doi.org/10.1007/s10854-022-08726-4

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